BAV19W 반도체 회로 부품 판매점
Surface Mount Fast Switching Diode
|
|
 LGE |
BAV19W-BAV21W
Surface Mount Fast Switching Diode
Features
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Applications
Mechanical Data
Case: SOD-123, Molded Plastic
Case Material: UL Flammability Rating
Classification 94V-0
Polarity: Cathode Band
Type Code: BAV19W: A8 or T2 or T3
BAV20W: T2 or T3
BAV21W: T3
Weight: 0.01 grams (approx.)
SOD-123
0.053(1.35)
Max.
0.022(0.55)
Typ. Min.
0.152(3.85)
0.140(3.55)
0.010(0.25)
Min.
0.112(2.85)
0.100(2.55)
0.006(0.15)
Typ. Min.
0.067(1.70)
0.055(1.40)
0.004(0.10)
Max.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25oC ambient temperature unless otherwise specified.
Maximum Ratings
Characteristic
Symbol
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0s
IFSM
Repetitive Peak Forward Surge Current
Power Dissipation
(Note 2)
Thermal Resistance Junction to Ambient Air (Note 2)
Operating and Storage Temperature Range
IFRM
Pd
RqJA
Tj , TSTG
Electrical Characteristics
Characteristic
Symbol
Reverse Breakdown Voltage (Note 1)
BAV19W
BAV20W
BAV21W
V(BR)R
Forward Voltage (Note 1)
VFM
Peak Reverse Current
@ Rated DC Blocking Voltage (Note 1)
Total Capacitance
IRM
CT
BAV19W
120
100
71
Min Max
120
200 ¾
250
¾
1.0
1.25
¾
100
15
¾ 5.0
Reverse Recovery Time
trr ¾
50
Notes: 1. Short duration pulse test used to minimize self-heating effect.
BAV20W
200
150
106
400
200
2.5
0.5
625
250
500
-65 to +150
BAV21W
250
200
141
Unit
V
V
V
mA
mA
A
mA
mW
°C/W
°C
Unit
V
V
nA
mA
pF
ns
Test Condition
IR = 100mA
IF = 100mA
IF = 200mA
Tj = 25°C
Tj = 100°C
VR = 0, f = 1.0MHz
IF = IR = 30mA,
Irr = 0.1 x IR, RL = 100W
http://www.luguang.cn
mail:[email protected]
BAV19W-BAV21W
Surface Mount Fast Switching Diode
300
250
200
1000
100
Tj = 25°C
150 10
100
50
0
0
25 50 75 100 125
T , AMBIENT TEMPERATURE (ºC)
A Fig. 1 Power Derating Curve
150
100
1.0
0.1
0.01
0
12
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
10
1
0.1
0.01
0
100 200
Tj, JUNCTION TEMPERATURE (°C)
Fig. 3 Leakage Current vs Junction Temperature
http://www.luguang.cn
mail:[email protected]
|
PDF 파일 내의 페이지 : 총 2 페이지
제조업체: LGE
( lge )
BAV19W diode
데이터시트 다운로드 :
[ BAV19W.PDF ]
[ BAV19W 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
BAV19
High Voltage General Purpose Diode - Fairchild Semiconductor
BAV19
Small Signal Diodes - General Semiconductor
BAV19
General Purpose Diodes - Fairchild Semiconductor
BAV19
Silicon Epitaxial Planar Diodes - Vishay Telefunken
BAV19
Silicon-Planar-Diodes - Diotec Semiconductor
BAV19
(BAVxx) SMALL SIGNAL SWITCHING DIODE - Galaxy Semi-Conductor
BAV19
(BAV19 - BAV21) Small-Signal Diode - GOOD-ARK
BAV19
High Voltage Switching Diode - Taiwan Semiconductor
BAV19
High Voltage Surface Mount Switching Diode - LGE