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BLUE ROCKET ELECTRONICS |
LV10T150B
Rev.E May.-2016
描述 / Descriptions
TO-263 塑封封装 肖特基二极管。
Schottky Diode in a TO-263 Plastic Package.
DATA SHEET
特征 / Features
高正向浪涌能力,超低正向压降,优异的高温稳定性。
High Forward Surge Capability, Ultra Low Forward Voltage Drop, Excellent High Temperature
Stability.
用途 / Applications
用于高频、低压、大电流整流二极管,续流二极管,保护二极管。
For use in low voltage,high frequency inverters, free wheeling, and polarity protection applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
12
3
4
PIN1:Anode
PIN 2,4:Cathode
PIN 3:Anode
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
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LV10T150B
Rev.E May.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average forward rectified current
Non Repetitive Peak Surge Current
Thermal Resistance Junction to Case
Junction and Storage Temperature Range
符号
Symbol
VRM
VRSM
VDC
VRMS
IF(AV)
IFSM
RθJc
Tj Tstg
DATA SHEET
数值
Rating
150
105
1×10
200
2.8
-40~+150
单位
Unit
V
V
A
A
℃/W
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Reverse Voltage
Forward Voltage
Instantaneous Reverse Current
符号
Symbol
测试条件
Test Conditions
V(BR)R IR=1mA(Ta=25℃)
IF =2A(Ta=25℃)
VF
IF =10A(Ta=25℃)
IF =2A(Ta=125℃)
IF =10A(Ta=125℃)
IR VR=150V(Ta=25℃)
(Note 1) VR=150V(Ta=125℃)
注/Notes:
1. 使用极短的测试时间,以尽量减少自热效应。
Short duration pulse test used to minimize self-heating effect.
2. 除非特别注明,数值为一个芯片的参数。
Unless otherwise noted, values for the parameters of a single chip
最小值 典型值 最大值
Min Typ Max
150
0.58
0.81 0.85
0.47
0.69 75
5 50
20
单位
Unit
V
V
V
V
V
μA
mA
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