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BLUE ROCKET ELECTRONICS |
LV20100CT
Rev.F Mar.-2016
描述 / Descriptions
TO-220 塑封封装 肖特基二极管。
Schottky Barrier Diode in a TO-220 Plastic Package.
DATA SHEET
特征 / Features
低正向压降,低功耗损失,高效率运行。
Low forward voltage drop,low power losses,High efficiency operation.
用途 / Applications
用于高频率逆变器,开关电源,续流二极管,OR-ing 二极管,DC-DC 转换器和电池反向保护。
For use in high frequency inverters, switching power supplies, freewheeling diodes,
OR-ing diode, dc-to-dc converters and reverse battery protection.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
12 3
PIN1:Anode
PIN 2:Cathode
PIN 3:Anode
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
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LV20100CT
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Repetitive peak reverse voltage
Average forward rectified current
Non Repetitive Peak Surge Current
Thermal Resistance Junction to Case
Junction and Storage Temperature Range
符号
Symbol
VRRM
IF(AV)
IFSM
RθJc
Tj Tstg
DATA SHEET
数值
Rating
100
2×10
150
2
-40~+150
单位
Unit
V
A
A
℃/W
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Breakdown Reverse Voltage
Forward Voltage
Instantaneous Reverse Current
符号
Symbol
测试条件
Test Conditions
VBR IR=1mA(Ta=25℃)
IF =5A(Ta=25℃)
VF
IF =10A(Ta=25℃)
IF =5A(Ta=125℃)
IF =10A(Ta=125℃)
IR VR=100V(Ta=25℃)
(Note 1) VR=100V(Ta=125℃)
最小值 典型值 最大值
Min Typ Max
100
0.55 0.65
0.65 0.79
0.50 0.60
0.62 0.68
100
10 25
单位
Unit
V
V
V
V
V
μA
mA
注/Notes:
1. 使用极短的测试时间,以尽量减少自热效应。/Short duration pulse test used to minimize self-heating
effect.
2. 除非特别注明,数值为一个芯片的参数。/ Unless otherwise noted, values for the parameters of a
single chip
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