파트넘버.co.kr RB400VA-50 데이터시트 PDF


RB400VA-50 반도체 회로 부품 판매점

Schottky Barrier Diode



ROHM Semiconductor 로고
ROHM Semiconductor
RB400VA-50 데이터시트, 핀배열, 회로
Data Sheet
Schottky Barrier Diode
RB400VA-50
Applications
General rectification
Dimensions (Unit : mm)
1.3±0.05
0.17±0.1
   0.05
Features
1) Small mold type. (TUMD2)
2) Low VF, Low IR.
3) High reliability.
Construction
Silicon epitaxial planer
0.8±0.05
ROHM : TUMD2
0.6±0.2
    0.1
dot (year week factory) + day
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
      0
Land size figure (Unit : mm)
1.1
TUMD2
Structure
0.25±0.05
Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz / 1cyc)
Junction temperature
Storage temperature
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
1.43±0.05
4.0±0.1
φ1.0±0.2
     0
Limits
50
40
0.5
3
125
40 to 125
Unit
V
V
A
A
°C
°C
0.9±0.08
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ. Max.
VF1 - - 0.55
IR1 - - 30
IR2 - - 50
Ct1 - 125 -
Ct2 - 20 -
Unit Conditions
V IF=500mA
μA VR=10V
μA VR=30V
pF VR=0V , f=1MHz
pF VR=10V , f=1MHz
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.B


RB400VA-50 데이터시트, 핀배열, 회로
RB400VA-50
Data Sheet
1000
100 Ta=75℃
Ta=125℃
10
1
Ta=25℃
Ta=-25℃
0.1
0
200 400
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
600
10000
1000
Ta=125℃
100 Ta=75℃
10
Ta=25℃
1
Ta=-25℃
0.1
0.01
0
5 10 15 20 25 30 35
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
40
1000
100
f=1MHz
10
1
0 5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
520 10
Ta=25℃
IF=0.5A
9
510
n=30pcs
8
7
500 6
5
490 4
3
480 2
AVE:495.8mV
470
1
0
VF DISPERSION MAP
Ta=25℃
VR=10V
n=30pcs
AVE:0.510uA
IR DISPERSION MAP
10
9
8
7
6
5
4
3
2
1
0
Ta=25℃
VR=35V
n=30pcs
AVE:1.562uA
IR DISPERSION MAP
200 25
190
180
Ta=25℃
f=1MHz
VR=0V
24
23
170
n=10pcs
22
160 21
150 20
140 19
130 AVE:117.5pF
18
120 17
110 16
100 15
Ta=25℃
f=1MHz
VR=10V
n=10pcs
AVE:20.66pF
30
20
10
0
Ifsm 1cyc
8.3ms
AVE:5.30A
Ct DISPERSION MAP
Ct DISPERSION MAP
IFSM DISRESION MAP
20 10
Ta=25℃
10
IF=0.5A
15
IR=1A
Irr=0.25*IR
n=10pcs
8
Ifsm
8.3ms 8.3ms
8
Ifsm
t
6
1cyc
6
10
44
5
AVE:9.3ns
0
trr DISPERSION MAP
2
0
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
2
0
1 10 100
TIME:t(ms)
IFSM-t CHARACTERISTICS
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.04 - Rev.B




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RB400VA-50 diode

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RB400VA-50

Schottky Barrier Diode - ROHM Semiconductor