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PDF RB238NS150 Data sheet ( Hoja de datos )
| Número de pieza | RB238NS150 | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Schottky Barrier Diode
RB238NS150
Data Sheet
lApplication
Switching power supply
lFeatures
1) Cathode common type.
2) Super Low IR
3) High reliability
4) AEC-Q101 qualified
(Limited to FH type)
lConstruction
Silicon epitaxial planar
lDimensions (Unit : mm)
2
RB238
NS150
1
13
lLand size figure (Unit : mm)
ROHM : LPDS
JEITA : TO263S
1 Manufacture Year, Week and Day
lTaping specifications (Unit : mm)
lStructure
1 23
lAbsolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
Forward current surge peak (60Hz・1cyc)(*1) IFSM
Junction temperature
Tj
Storage temperature
Tstg
(*1) Rating of per diode : Io/2
Limits
150
150
40
100
150
-55 to +150
Unit
V
V
A
A
°C
°C
lElectrical characteristics (Tj = 25°C)
Parameter
Forward voltage
Reverse current
Symbol Min.
VF -
IR -
Typ. Max.
0.79 0.92
1.0 30
Unit Conditions
V IF=20A
mA VR=150V
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.02 - Rev.A
1 page  
RB238NS150
lElectrical characteristic curves
Data Sheet
1000
900
800
700
600
500
400
300
200
100
0
0
DUTY = 100%(DC)
DUTY = 50%
Sin(θ=180)
50 100
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
150
35
DUTY = 100%(DC) VR=75V
30 Tj=150°C
25
20
15 DUTY = 50%
10 Sin(θ=180)
5
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
35
30
DUTY = 100%(DC)
25 DUTY = 50%
VR=75V
Tj=150°C
20
15 Sin(θ=180)
10
5
0
0 25 50 75 100 125 150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
10
9
8
7
6 AVE : 5.0kV
5
4
3
2 AVE : 1.0kV
1
0 C=200pF
R=0W
C=100pF
R=1.5kW
ESD DISPERSION MAP
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
5/5
2014.02 - Rev.A
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RB238NS150.PDF ] | |
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