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Galaxy Microelectronics |
Production specification
Schottky Barrier Diodes
MMBD101
FEATURES
z Low noise figure -6.0dB @1.0GHz.
Pb
z Surface mount package ideally suited Lead-free
for automatic insertion.
z Very low capacitance –less than 1.0pF @zero volts.
z High forward conductance -0.5volts (typ.) @IF=10mA.
APPLICATIONS
z High speed switching.
SOT-23
ORDERING INFORMATION
Type No.
MMBD101
Marking
4M
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Characteristic
Symbol
DC Reverse Voltage
VR
Power Dissipation
Pd
Operating Junction Temperature Range
Tj
Storage Temperature Range
TSTG
Limits
7.0
225
150
-55 to +150
Unit
V
mW
℃
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Characteristic
Symbol Min. TYP. MAX UNIT Test Condition
Reverse Breakdown Voltage
V(BR)R
7.0 10
V IR=10μA
Forward Voltage
VF
0.5 0.6 V
IF=10mA
Reverse Current IR 0.02 0.25 μA VR=3.0V
Diode Capacitance
CT
0.88 1.0 pF VR=0V,f=1MHz
C132
Rev.A
www.gmicroelec.com
1
Production specification
Schottky Barrier Diodes
MMBD101
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
C132
Rev.A
www.gmicroelec.com
2
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