MMBD101 반도체 회로 부품 판매점
SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
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 Pan Jit International |
MMBD101/MMBD352/MMBD354/MMBD355
SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
VOLTAGE
7.0 Volts
POWER 250 mW
FEATURES
• Low Capacitance,Minimizing Insertion Losses in VHF Applications
• Low VF : 0.5V (Typ) at IF=10mA
• Extremely Fast Switching Speed
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
Case : SOT-23, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Approx weight : 0.0003 ounces, 0.0084 grams
MAXIMUM RATINGS
PARAMETER
Marking Code
Reverse Voltage
Forword Power Dissipation
Junction Temperature Range
Storage Temperature Range
Circuit Figure
THERMAL CHARACTERISTICS
PARAMETER
Termal Resistance , Junction to Ambient
Note 1. FR-5 Board = 1.0 x 0.75 x 0.062 in
SYMBOL MMBD101 MMBD352 MMBD354 MMBD355 UNITS
-
101 352 354 355
-
VR
PF
TJ
TSTG
-
7
250
-55 to +125
SINGLE
-55 to +150
SERIES
COMMON COMMON
CATHODE ANODE
V
mW
OC
OC
-
SYMBOL
RθJA
VALUE
400
UNITS
OC/W
SINGLE
SERIES
COMMON CATHODE COMMON ANODE
March 30,2012-REV.01
PAGE . 1
MMBD101/MMBD352/MMBD354/MMBD355
ELECTRICAL CHARACTERISTICS (TA=25OC , unless otherwise noted)
PARAMETER
Reverse Breakdown Voltage
Reverse Leakage Current
Forword Voltage
Total Capacitance
SYMBOL
TEST CONDITION
V(BR)
IR
VF
CJ
IR=10µA
VR=3.0V
IF=10mA
f=1.0MHz , VR=0V
MIN. TYP. MAX. UNITS
7.0 10
-
V
-
-
0.25
µA
- 0.5 0.6 V
-
0.88
1.0
pF
ELECTRICAL CHARACTERISTICS CURVE
TJ=125OC
TJ=75OC
1
TJ=25OC
Forward Voltage, VF(V)
Fig.1-Typical Forward Characteristics
VR=3V
1
0
Junction Temperature,TJ(C)
Fig.2-Typical Reverse Characteristics
f=1MHz
March 30,2012-REV.01
01
2 34 5
Reverse Voltage,VR(V)
6
Fig.3-Typical Total Capacitance
7
PAGE . 2
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제조업체: Pan Jit International
( panjit )
MMBD101 diode
데이터시트 다운로드 :
[ MMBD101.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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