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VS-12FL80S05 반도체 회로 부품 판매점

Fast Recovery Diodes



Vishay 로고
Vishay
VS-12FL80S05 데이터시트, 핀배열, 회로
www.vishay.com
VS-6FL(R), VS-12FL(R), VS-16FL(R) Series
Vishay Semiconductors
Fast Recovery Diodes
(Stud Version), 6 A, 12 A, 16 A
DO-203AA (DO-4)
PRODUCT SUMMARY
IF(AV)
Package
Circuit configuration
6 A, 12 A, 16 A
DO-203AA (DO-4)
Single diode
FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Standard JEDEC® types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC power supplies
• Inverters
• Converters
• Choppers
• Ultrasonic systems
• Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
6FL
IF(AV)
IF(RMS)
IFSM
TC
50 Hz
60 Hz
6
100
9.5
110
115
50 Hz
I2t
60 Hz
I2t
60
55
1452
VRRM
trr
Range
50 to 1000
See Recovery
Characteristics table
TJ
Range
-65 to +150
12FL
12
100
19
145
150
103
94
1452
50 to 1000
See Recovery
Characteristics table
-65 to +150
16FL
16
100
25
180
190
160
150
2290
50 to 1000
See Recovery
Characteristics table
-65 to +150
UNITS
A
°C
A
A
A2s
I2s
V
ns
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
5 50
10 100
VS-6FL..,
VS-12FL..,
VS-16FL..
20
40
60
200
400
600
80 800
100 1000
VRSM, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
75
150
275
500
725
950
1250
IRRM MAXIMUM
AT TJ = 25 °C
μA
IRRM MAXIMUM
AT TJ = 100 °C
mA
IRRM MAXIMUM
AT TJ = 150 °C
mA
50 - 6.0
Revision: 06-Mar-17
1 Document Number: 93138
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


VS-12FL80S05 데이터시트, 핀배열, 회로
www.vishay.com
VS-6FL(R), VS-12FL(R), VS-16FL(R) Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
IF(AV)
Maximum RMS current
IF(RMS)
Maximum peak, one-cycle
non-repetitive forward current
IFSM
Maximum I2t for fusing
Maximum I2t for fusing
Maximum forward voltage drop
Note
(1) JEDEC registered values
I2t
I2t
VFM
TEST CONDITIONS
180° conduction, half sine wave
DC
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal
half wave,
initial
TJ = 150 °C
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = 25 °C; IF = Rated IF(AV) (DC)
TC = 100 °C; IFM = x rated IF(AV)
6FL..
6
100
9.5
130
135
110
115
86
78
60
55
856
1.4
1.5
12FL..
12 (1)
100
19
170
180
145
150 (1)
145
130
103
94
1452
1.4 (1)
1.5 (1)
16FL..
16
100
25
215
225
180
190
230
210
160
150
2290
1.4
1.5
UNITS
A
°C
A
A2s
A2s
V
RECOVERY CHARACTERISTICS
6FL..,
12FL..,
16FL..
PARAMETER SYMBOL TEST CONDITIONS
UNITS
S02 S05 S10 S02 S05 S10 S02 S05 S10
TJ = 25 °C,
Maximum
reverse
recovery time
trr
IF = 1 A to VR = 30 V, 110 285 490 100 250 430 90 225 390
dIF/dt = 100 A/μs
TJ = 25 °C,
dIF/dt = 25 A/μs,200 500 1000 200 500 1000 200 500 1000
IFM = x rated IF(AV)
Maximum
peak recovery IRM(REC) IFM = x rated IF(AV) -
-
-
--
---
-
current
TJ = 25 °C,
Maximum
IF = 1 A to VR = 30 V, 230 1700 5000 200 1300 3800 150 1100 3000
reverse
recovery
charge
Qrr
dIF/dt = 100 A/μs
TJ = 25 °C,
dIF/dt = 25 A/μs,200 1200 5000 200 1200 5000 200 1200 5000
IFM = x rated IF(AV)
Note
(1) JEDEC registered values
ns
-
nC
IFM
trr
dir t
dt Qrr
IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
6FL.. 12FL.. 16FL.. UNITS
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
TJ
TStg
RthJC
RthCS
Allowable mounting torque
Approximate weight
Case style
DC operation
Mounting surface, smooth, flat, and greased
Not lubricated threads
Lubricated threads
JEDEC®
-65 to +150
-65 to +175
°C
2.5 2.0 1.6
°C/W
0.5
1.5 + 0 - 10 %
(13)
1.2 + 0 - 10 %
(10)
N·m
(lbf · in)
7g
0.25 oz.
DO-203AA (DO-4)
Revision: 06-Mar-17
2 Document Number: 93138
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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VS-12FL80S05 diode

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Fast Recovery Diodes - Vishay