MV1405 반도체 회로 부품 판매점
Silicon Hyper Abrupt Tuning Diodes
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 Motorola Semiconductors |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Hyper-Abrupt Tuning Diodes
These devices are designed with high capacitance and a capacitance change of
greater than TEN TIMES for a bias change from 2.0 to 10 volts. They provide tuning
over broad frequency ranges; tune AM radio broadcast band, general AFC and tuning
applications in lower RF frequencies.
• High Capacitance: 120–250 pF
• Large Capacitance Change with Small Bias Change
• Guaranteed High Q
• Available in Standard Axial Glass Packages
2
Anode
1
Cathode
MV1403
MV1404
MV1405
120 – 250 pF
12 VOLTS
HIGH TUNING RATIO
VOLTAGE–VARIABLE
CAPACITANCE DIODES
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR 12 Vdc
Forward Current
IF 250 mAdc
Device Dissipation @ TA = 25°C
Derate above 25°C
PD 400 mW
2.67 mW/°C
1 CASE 51–02
(DO–204AA)
Junction Temperature
TJ +125 °C
Storage Temperature Range
Tstg – 65 to + 200
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Breakdown Voltage
(IR = 10 µAdc)
Reverse Voltage Leakage Current
(VR = 10 Vdc, TA = 25°C)
Series Inductance
(f = 250 MHz, Lead Length ≈ 1/16″)
V(BR)R
IR
LS
12
—
—
— — Vdc
— 0.1 µAdc
5.0 — nH
Case Capacitance
(f = 1.0 MHz, Lead Length ≈ 1/16″)
CC
— 0.25 —
pF
Device
MV1403
MV1404
MV1405
CT, Diode Capacitance
VR = 2.0 Vdc, f = 1.0 MHz
pF
Min Nom Max
140 175 210
96 120 144
200 250 300
Q, Figure of Merit
VR = 2.0 Vdc,
f = 1.0 MHz
Min
200
200
200
TR, Tuning Ratio
C1/C10
f = 1.0 MHz
C2/C10
f = 1.0 MHz
Min Min
— 10
— 10
— 10
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5–157
MV1403 MV1404 MV1405
TYPICAL CHARACTERISTICS
500
300
200
100 MV1405
MV1403
50 MV1404
30
20
TA = 25°C
f = 1 MHz
10
0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus
Reverse Voltage
1.08
f = 1.0 MHz
1.06
1.04 VR = 2 Vdc
1.02
1
0.98
0.96
0.94
0.92
–50
–25 0
25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C)
Figure 2. Diode Capacitance versus
Ambient Temperature
150
1000
VR = 4 Vdc
VR = 6 Vdc
VR = 2 Vdc
100
10
12
5 10 20
f, FREQUENCY (MHz)
50 100
Figure 3. Figure of Merit versus Frequency
5–158
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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MV1405 diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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