파트넘버.co.kr MMBD2010T1 데이터시트 PDF


MMBD2010T1 반도체 회로 부품 판매점

Switching Diode



ON Semiconductor 로고
ON Semiconductor
MMBD2010T1 데이터시트, 핀배열, 회로
MMBD1010LT1
Switching Diode
Part of the GreenLinePortfolio of devices with
energyconserving traits.
This switching diode has the following features:
Very Low Leakage (500 pA) promotes extended battery life by
decreasing energy waste. Guaranteed leakage limit is for each diode
in the pair contingent upon the other diode being in a
nonforwardbiased condition.
Offered in four Surface Mount package types
Available in 8 mm Tape and Reel in quantities of 3,000
Applications
ESD Protection
Reverse Polarity Protection
Steering Logic
MediumSpeed Switching
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
DEVICE MARKING
VR 30 Vdc
IF 200 mAdc
IFM
(surge)
500
mA
MMBD1010LT1 = A5
MMBD2010T1 = DP
MMBD3010T1 = XS
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-4 Board (1)
TA = 25°C
MMBD1010LT1,
MMBD3010T1
MMBD2010T1
Derate above 25°C MMBD1010LT1,
MMBD3010T1
MMBD2010T1
Symbol
PD
Max
225
150
1.8
1.2
Unit
mW
mW/°C
Thermal Resistance Junction to
Ambient
MMBD1010LT1,
MMBD3010T1
MMBD2010T1
RθJA
°C/W
556
833
Junction and Storage Temperature
TJ, Tstg 55 to +150
°C
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 2
1
http://onsemi.com
MMBD1010LT1
3
1
2
CASE 318-08, STYLE 9
SOT-23 (TO-236AB)
MMBD2010T1
3
1
2
CASE 419-02, STYLE 5
SC70/SOT323
MMBD3010T1
2
1
3
CASE 318D-04, STYLE 3
SC59
3
CATHODE
ANODE
1
2
ANODE
Publication Order Number:
MMBD1010LT1/D


MMBD2010T1 데이터시트, 핀배열, 회로
MMBD1010LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 μA)
Reverse Voltage Leakage Current (VR = 75 V)(2)
V(BR) 30 —
V
IR — 500 pA
Forward Voltage (IF = 1.0 mA)
Forward Voltage (IF = 10 mA)
VF — 850 mV
— 950
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
CD — 2.0 pF
Reverse Recovery Time (IF = IR = 10 mA) (Figure 1)
trr — 3.0 μs
(2) Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being
in a nonforwardbiased condition.
+10 V
820 Ω
2k
100 μH
0.1 μF
IF
0.1 μF
tr tp
10%
t
IF
trr t
50 Ω OUTPUT
PULSE
GENERATOR
DUT
50 Ω INPUT
90%
SAMPLING
OSCILLOSCOPE
VR
INPUT SIGNAL
IR
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
http://onsemi.com
2




PDF 파일 내의 페이지 : 총 7 페이지

제조업체: ON Semiconductor

( onsemi )

MMBD2010T1 diode

데이터시트 다운로드
:

[ MMBD2010T1.PDF ]

[ MMBD2010T1 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


MMBD2010T1

Switching Diode - ON Semiconductor



MMBD2010T1

Switching Diode - Motorola Semiconductors