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ON Semiconductor |
MMBD1010LT1
Switching Diode
Part of the GreenLine™ Portfolio of devices with
energy−conserving traits.
This switching diode has the following features:
• Very Low Leakage (≤ 500 pA) promotes extended battery life by
decreasing energy waste. Guaranteed leakage limit is for each diode
in the pair contingent upon the other diode being in a
non−forward−biased condition.
• Offered in four Surface Mount package types
• Available in 8 mm Tape and Reel in quantities of 3,000
Applications
• ESD Protection
• Reverse Polarity Protection
• Steering Logic
• Medium−Speed Switching
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
DEVICE MARKING
VR 30 Vdc
IF 200 mAdc
IFM
(surge)
500
mA
MMBD1010LT1 = A5
MMBD2010T1 = DP
MMBD3010T1 = XS
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-4 Board (1)
TA = 25°C
MMBD1010LT1,
MMBD3010T1
MMBD2010T1
Derate above 25°C MMBD1010LT1,
MMBD3010T1
MMBD2010T1
Symbol
PD
Max
225
150
1.8
1.2
Unit
mW
mW/°C
Thermal Resistance Junction to
Ambient
MMBD1010LT1,
MMBD3010T1
MMBD2010T1
RθJA
°C/W
556
833
Junction and Storage Temperature
TJ, Tstg − 55 to +150
°C
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
http://onsemi.com
MMBD1010LT1
3
1
2
CASE 318-08, STYLE 9
SOT-23 (TO-236AB)
MMBD2010T1
3
1
2
CASE 419-02, STYLE 5
SC−70/SOT−323
MMBD3010T1
2
1
3
CASE 318D-04, STYLE 3
SC−59
3
CATHODE
ANODE
1
2
ANODE
Publication Order Number:
MMBD1010LT1/D
MMBD1010LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 μA)
Reverse Voltage Leakage Current (VR = 75 V)(2)
V(BR) 30 —
V
IR — 500 pA
Forward Voltage (IF = 1.0 mA)
Forward Voltage (IF = 10 mA)
VF — 850 mV
— 950
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
CD — 2.0 pF
Reverse Recovery Time (IF = IR = 10 mA) (Figure 1)
trr — 3.0 μs
(2) Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being
in a non−forward−biased condition.
+10 V
820 Ω
2k
100 μH
0.1 μF
IF
0.1 μF
tr tp
10%
t
IF
trr t
50 Ω OUTPUT
PULSE
GENERATOR
DUT
50 Ω INPUT
90%
SAMPLING
OSCILLOSCOPE
VR
INPUT SIGNAL
IR
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
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2
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