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BAV70W 반도체 회로 부품 판매점

Dual Switching Diode Common Cathode



ON Semiconductor 로고
ON Semiconductor
BAV70W 데이터시트, 핀배열, 회로
BAV70W, SBAV70W
Dual Switching Diode
Common Cathode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Max Unit
Reverse Voltage
VR 100 V
Forward Current
IF 200 mA
Peak Forward Surge Current
IFM(surge) 500
mA
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD 200 mW
1.6 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
625 °C/W
Total Device Dissipation
PD 300 mW
Alumina Substrate (Note 2) TA = 25°C
Derate above 25°C
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
−55 to
+150
°C
www.onsemi.com
SOT−323
CASE 419
STYLE 5
3
CATHODE
ANODE
1
2
ANODE
MARKING DIAGRAM
3
A4 MG
G
12
A4 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
BAV70WT1G
SOT−323 3,000 / Tape & Reel
(Pb−Free)
SBAV70WT1G SOT−323 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 8
1
Publication Order Number:
BAV70WT1/D


BAV70W 데이터시트, 핀배열, 회로
BAV70W, SBAV70W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I(BR) = 100 mA)
Reverse Voltage Leakage Current (Note 3)
(VR = 100 V)
(VR = 50 V)
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
Diode Capacitance
(VR = 0 V, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 10 mA, RL = 100 W, IR(REC) = 1.0 mA) (Figure 1)
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 2)
3. For each individual diode while the second diode is unbiased.
Symbol
V(BR)
IR
VF
CD
trr
VRF
Min
100
Max
1.0
100
715
855
1000
1250
1.5
6.0
1.75
Unit
V
mA
nA
mV
pF
ns
V
www.onsemi.com
2




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