파트넘버.co.kr BAS21SLT1 데이터시트 PDF


BAS21SLT1 반도체 회로 부품 판매점

Dual Series High Voltage Switching Diode



ON Semiconductor 로고
ON Semiconductor
BAS21SLT1 데이터시트, 핀배열, 회로
BAS21SLT1
Preferred Device
Dual Series High Voltage
Switching Diode
Features
Moisture Sensitivity Level: 1
ESD Rating − Human Body Model: Class 1
ESD Rating − Machine Model: Class B
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
VR
VRRM
IF
IFM(surge)
250
250
225
625
Vdc
Vdc
mAdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board PD 225 mW
(Note 1)
TA = 25°C
Derate above 25°C
1.8 mW/°C
Thermal Resistance,
Junction to Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD 300 mW
2.4 mW/°C
Thermal Resistance,
Junction to Ambient
RqJA
417 °C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
ANODE
1
CATHODE
2
3
CATHODE/ANODE
3
1
2
SOT−23
CASE 318
STYLE 11
MARKING DIAGRAM
JT M
JT = Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
BAS21SLT1
SOT−23 3000/Tape & Reel
BAS21SLT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
May, 2004 − Rev. 4
1
Publication Order Number:
BAS21SLT1/D


BAS21SLT1 데이터시트, 핀배열, 회로
BAS21SLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 mAdc)
IR
V(BR)
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
VF
CD
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 W)
trr
Min Max Unit
mAdc
− 0.1
− 100
250 − Vdc
mV
− 1000
− 1250
− 5.0 pF
− 50 ns
+10 V
820 W
2.0 k
100 mH
0.1 mF
IF
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
0.1 mF
tr tp
10%
t
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 3.0 mA
IR
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at iR(REC) = 3.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
1200
1000
800
600
400
200
1
1
TA = −55°C
25°C
155°C
10 100
FORWARD CURRENT (mA)
Figure 2. Forward Voltage
1000
7000
6000
5000
4000
3000
6
5
4
3
2
1
0
1
TA = 155°C
TA = 25°C
TA = −55°C
2
5 10 20
50 100 200 300
REVERSE VOLTAGE (V)
Figure 3. Reverse Leakage
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2




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