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BAS21AHT1G 반도체 회로 부품 판매점

Low Leakage Switching Diode



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ON Semiconductor
BAS21AHT1G 데이터시트, 핀배열, 회로
BAS21AHT1G
Low Leakage
Switching Diode
Features
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
VR Continuous Reverse Voltage
VRRM Repetitive Peak Reverse Voltage
IF Peak Forward Current
IFM(surge) Peak Forward Surge Current
THERMAL CHARACTERISTICS
250 Vdc
250 Vdc
200 mAdc
625 mAdc
Symbol
Characteristic
Max Unit
PD Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
200 mW
1.57 mW/°C
RqJA
Thermal Resistance,
Junction−to−Ambient
635 °C/W
TJ, Tstg Junction and Storage Temperature
Range
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 Minimum Pad
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LOW LEAKAGE
SWITCHING DIODE
1
CATHODE
2
ANODE
MARKING
2 DIAGRAM
1
SOD−323
CASE 477
STYLE 1
AA M G
G
AA = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
BAS21AHT1G
SOD−323 3000/Tape & Reel
(Pb−Free)
NSVBAS21AHT1G SOD−323 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 2
1
Publication Order Number:
BAS21AHT1/D


BAS21AHT1G 데이터시트, 핀배열, 회로
BAS21AHT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 mAdc)
IR
V(BR)
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
VF
CD
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 W)
trr
Min Typ Max Unit
− − 40 nAdc
− − 100 mAdc
250 −
− Vdc
mV
− − 1000
− − 1250
− − 5.0 pF
− 50 − ns
+10 V
820 W
2.0 k
100 mH
0.1 mF
IF
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
0.1 mF
tr tp
10%
t
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 3.0 mA
IR
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at iR(REC) = 3.0 mA)
1200
1000
800
600
400
200
1
1
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
TA = −55°C
25°C
155°C
10 100
FORWARD CURRENT (mA)
Figure 2. Forward Voltage
1000
7000
6000
5000
4000
3000
6
5
4
3
2
1
0
1
TA = 155°C
TA = 25°C
TA = −55°C
2
5 10 20
50 100 200 300
REVERSE VOLTAGE (V)
Figure 3. Reverse Leakage
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2




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Low Leakage Switching Diode - ON Semiconductor