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ROHM Semiconductor |
Schottky Barrier Diode
RB085BM-40
lApplication
General Rectification
lDimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
6.0
lFeatures
1) Power mold type (TO-252)
2) Cathode common dual type
12
3) High reliability
4) Low VF
lConstruction
Silicon epitaxial planar type
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
2 : Serial number
lTaping specifications (Unit : mm)
1.6 1.6
TO-252
2.3 2.3
lStructure
(2)
Cathode
(1) (3)
Anode Anode
lAbsolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Limits
Unit
Conditions
Repetitive Peak Reverse Voltage
VRM 45 V Duty≦0.5
Reverse Voltage
Average forward rectified current
Non-repetitive Forward Current Surge Peak
Operating Junction Temperature
VR
Io
IFSM
Tj
40 V Direct Reverse Voltage
10
A
60Hz half sin Wave resistive load,
Tc=102°C max., 1/2 Io per diode
50
A
60Hz half sin wave,
Non-repetitive at Ta=25ºC, per diode
150 °C
-
Storage Temperature
Tstg -40 to +150 °C
-
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
Reverse current
VF - - 0.55 V IF=5.0A
IR - - 0.2 mA VR=40V
Thermal Resistance
Rth(j-c)
-
- 6.0 °C / W Junction to Case
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© 2016 ROHM Co., Ltd. All rights reserved.
1/5
2016.04 - Rev.B
RB085BM-40
lElectrical characteristic curves
Data Sheet
10
Tj = 125°C
Tj = 150°C
1
0.1
Tj = 75°C
Tj = 25°C
Tj = -25°C
0.01
0 100 200 300 400 500 600 700
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
100000
10000
1000
100
10
1
Tj = 150°C
Tj = 125°C
Tj = 75°C
Tj = 25°C
0.1
0.01
0
Tj = -25°C
10 20 30
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
40
1000
f = 1MHz
570
560
550
Tj=25°C
IF=5A
n=30pcs
540
530
100
520
510 AVE : 494.3mV
500
490
10
0
480
10 20 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
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© 2016 ROHM Co., Ltd. All rights reserved.
2/5
2016.04 - Rev.B
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