NSR0320MW2T1G 반도체 회로 부품 판매점
Schottky Barrier Diodes
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 ON Semiconductor |
NSR0320MW2T1G,
NSVR0320MW2T1G,
NSR0320MW2T3G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high current,
handling capability, and low forward voltage performance.
Features
Low Forward Voltage − 0.24 Volts (Typ) @ IF = 10 mAdc
High Current Capability
ESD Rating:
Human Body Model: CLASS 3B
Machine Model: C
AEC Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TJ = 125C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Peak Revese Voltage
Forward Power Dissipation
@ TA = 25C
Derate above 25C
VR
VRM
PF
20 Vdc
23 V
200 mW
2.0 mW/C
Forward Current (DC)
Continuous
IF A
1
Forward Current
t = 8.3 ms Half Sinewave
IF A
5
Junction Temperature Range
TJ −55 to +125 C
Storage Temperature Range
Tstg − 55 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
HIGH CURRENT
SCHOTTKY BARRIER DIODE
SOD−323
CASE 477
STYLE 1
1
CATHODE
2
ANODE
MARKING DIAGRAM
RD MG
G
RD = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping†
NSR0320MW2T1G
SOD−323
3,000 /
(Pb−Free) Tape & Reel
NSVR0320MW2T1G
NSR0320MW2T3G
SOD−323
(Pb−Free)
SOD−323
(Pb−Free)
3,000 /
Tape & Reel
10,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 4
Publication Order Number:
NSR0320MW2T1/D
NSR0320MW2T1G, NSVR0320MW2T1G, NSR0320MW2T3G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Total Capacitance (VR = 5.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 15 V)
Reverse Leakage (VR = 2.0 V @ 85C)
Reverse Leakage (VR = 15.0 V @ 85C)
Forward Voltage (IF = 10 mA)
Forward Voltage (IF = 100 mA)
Forward Voltage (IF = 900 mA)
Symbol
CT
IR
IR
IR
VF
VF
VF
Min
−
−
−
−
−
−
−
Typ Max
25 29
10 50
200 300
450 1000
0.24 0.27
0.30 0.35
0.45 0.50
Unit
pF
mA
mA
mA
V
V
V
1000
100 150C
10
1
0.0
85C
−55C
25C −45C
0.1 0.2 0.3
0.4
VF, FORWARD VOLTAGE (V)
0.5
Figure 1. Forward Voltage
10000
1000
100
150C
125C
85C
10
1
0.6 0
25C
5 10 15 20
VR, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
25
140
120
100
80
60
40
20
0
0
5 10 15
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
20
http://onsemi.com
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NSR0320MW2T1G diode
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관련 데이터시트
NSR0320MW2T1
Schottky Barrier Diodes - ON Semiconductor
NSR0320MW2T1G
Schottky Barrier Diodes - ON Semiconductor