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ROHM Semiconductor |
Schottky Barrier Diode
RB298NS100
Data Sheet
lApplication
Switching power supply
lFeatures
1) Cathode common dual type
2) High reliability
3) Super low IR
lDimensions (Unit : mm)
(2)
RB298
NS100
1
(1) (3)
lLand size figure (Unit : mm)
11
9.9
2.5
2.54
TO-263S
2.54
lStructure
(2) Cathode
lConstruction
Silicon epitaxial planar type
ROHM : TO-263S JEITA : SC-83
①1 : Manufacture date
lTaping specifications (Unit : mm)
(1) Anode (3) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
110 V
Reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Operating junction temperature
VR
Io
IFSM
Tj
Direct reverse voltage
60Hz half sin wave, resistive load,
IO/2 per diode, Tc=100ºC Max.
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle, per diode
-
100 V
30 A
100 A
150 °C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical and Thermal Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF IF=15A - - 0.87 V
Reverse current
IR
VR=100V
- - 10 mA
Thermal resistance
Rth(j-c)
Junction to case
- - 2 °C/W
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© 2016 ROHM Co., Ltd. All rights reserved.
1/3
2016.01 - Rev.A
RB298NS100
lElectrical Characteristic Curves
Data Sheet
100
Tj = 150°C
10
1
0.1
0.01
Tj = 125°C
Tj = 75°C
Tj = 25°C
Tj = -25°C
0.001
0
200 400 600 800 1000 1200
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10000
1000
100 Tj = 150°C Tj = 125°C
10
1
Tj = 75°C
Tj = 25°C
0.1
0.01
Tj = -25°C
0.001
0.0001
0
20 40 60 80 100
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
40
35
30
25
20
15
10
5
0
0
Tj = 150°C
D = 1/2
Sin(θ=180)
DC
10 20 30 40
AVERAGE RECTIFIED
FORWARD CURRENT : Io (A)
Io-PF CHARACTERISTICS
50
500
450 Tj = 150°C
400
350
300
250 Sin(θ=180)
200
D = 1/2
150
DC
100
50
0
0 20 40 60 80 100
REVERSE VOLTAGE : VR (V)
VR-PR CHARACTERISTICS
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© 2016 ROHM Co., Ltd. All rights reserved.
2/3
2016.01 - Rev.A
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