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RB298NS100 반도체 회로 부품 판매점

Schottky Barrier Diode



ROHM Semiconductor 로고
ROHM Semiconductor
RB298NS100 데이터시트, 핀배열, 회로
Schottky Barrier Diode
RB298NS100
Data Sheet
lApplication
Switching power supply
lFeatures
1) Cathode common dual type
2) High reliability
3) Super low IR
lDimensions (Unit : mm)
(2)
RB298
NS100
1
(1) (3)
lLand size figure (Unit : mm)
11
9.9
2.5
2.54
TO-263S
2.54
lStructure
(2) Cathode
lConstruction
Silicon epitaxial planar type
ROHM : TO-263S JEITA : SC-83
1 : Manufacture date
lTaping specifications (Unit : mm)
(1) Anode (3) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
110 V
Reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Operating junction temperature
VR
Io
IFSM
Tj
Direct reverse voltage
60Hz half sin wave, resistive load,
IO/2 per diode, Tc=100ºC Max.
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle, per diode
-
100 V
30 A
100 A
150 °C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical and Thermal Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF IF=15A - - 0.87 V
Reverse current
IR
VR=100V
- - 10 mA
Thermal resistance
Rth(j-c)
Junction to case
- - 2 °C/W
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/3
2016.01 - Rev.A


RB298NS100 데이터시트, 핀배열, 회로
RB298NS100
lElectrical Characteristic Curves
Data Sheet
100
Tj = 150°C
10
1
0.1
0.01
Tj = 125°C
Tj = 75°C
Tj = 25°C
Tj = -25°C
0.001
0
200 400 600 800 1000 1200
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10000
1000
100 Tj = 150°C Tj = 125°C
10
1
Tj = 75°C
Tj = 25°C
0.1
0.01
Tj = -25°C
0.001
0.0001
0
20 40 60 80 100
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
40
35
30
25
20
15
10
5
0
0
Tj = 150°C
D = 1/2
Sin(θ=180)
DC
10 20 30 40
AVERAGE RECTIFIED
FORWARD CURRENT : Io (A)
Io-PF CHARACTERISTICS
50
500
450 Tj = 150°C
400
350
300
250 Sin(θ=180)
200
D = 1/2
150
DC
100
50
0
0 20 40 60 80 100
REVERSE VOLTAGE : VR (V)
VR-PR CHARACTERISTICS
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/3
2016.01 - Rev.A




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RB298NS100 diode

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Schottky Barrier Diode - ROHM Semiconductor