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ROHM Semiconductor |
Schottky Barrier Diode
RB228T100NZ
lApplications
Switching power supply
lFeatures
1) Cathode common dual type
2) Low IR
3) High reliability
lDimensions (Unit : mm)
10.0±00..31
f3.2±0.2
1
1.2
1.3
0.8
4.5±00..31
2.8±00..21
2.6±0.5
lConstruction
Silicon epitaxial planar type
2.45±0.5 2.45±0.5
(1) (2) (3)
0.75±00..015
ROHM : TO220FN
1 : Manufacture date
Data Sheet
lStructure
Cathode
(2)
(1) (3)
Anode Anode
lPackage Dimensions (Unit : mm)
7 540
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
VRM
Reverse voltage
VR
Average forward rectified current
Io
Non-repetitive forward current surge peak IFSM
Operating junction temperature
Tj
Storage temperature
Tstg
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Forward voltage
Reverse current
Thermal resistance
VF
IR
Rth(j-c)
Conditions
Duty≦0.5
Direct reverse voltage
60Hz half sin wave, resistive load,
IO/2 per diode, Tc=83ºC Max.
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle, per diode
-
-
Limits Unit
110 V
100 V
30 A
100 A
150 °C
-40 to +150 °C
Conditions
IF=5A
VR=100V
Junction to case
Min. Typ. Max. Unit
- - 0.87 V
- - 5 mA
- - 2.00 °C/W
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© 2016 ROHM Co., Ltd. All rights reserved.
1/4
2016.09 - Rev.A
RB228T100NZ
Data Sheet
100
Ta=75°C
10
Ta=125°C
1
Ta=150°C
0.1
0.01
Ta=25°C
Ta=-25°C
0.001
100 200 300 400 500 600 700 800 900
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
1000
f=1MHz
100
10
0
400
300
200
100
0
10 20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
Ta=25°C
VR=100V
n=30pcs
AVE:151nA
IR DISPERSION MAP
1000000
100000
Ta=150°C
Ta=125°C
10000
1000
100
10
Ta=75°C
Ta=25°C
Ta=-25°C
1
0 10 20 30 40 50 60 70 80 90 100 110
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
770
Ta=25°C
760 IF=5A
n=30pcs
750
740 AVE:731.5mV
730
720
VF DISPERSION MAP
600
590 Ta=25°C
f=1MHz
580 VR=0V
n=10pcs
570
560
550
540
530
AVE:514.4pF
520
510
500
Ct DISPERSION MAP
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© 2016 ROHM Co., Ltd. All rights reserved.
2/4
2016.09 - Rev.A
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