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ROHM Semiconductor |
Schottky Barrier Diode
RB218T100NZ
Data Sheet
lApplication
Switching power supply
lFeatures
1) Cathode common type
2) High reliability
3) Super low IR
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
4.5±00..31
10.0±
0.3
0.1
f3.2±0.2
2.8±00..21
lStructure
1
1.2
1.3
0.8
(1) (2) (3)
Anode Cathode Anode
2.6±0.5
2.45±0.5 2.45±0.5
(1) (2) (3)
0.75±00..015
ROHM : TO220FN
1 : Manufacture Date
lPackage Dimensions (Unit : mm)
7 540
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
110 V
Reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Operating junction temperature
VR
Io
IFSM
Tj
Direct reverse voltage
60Hz half sin wave, resistive load,
Tc=115ºC Max., IO/2 per diode
60Hz half sin wave, Non-repetitive at
Ta=25ºC, 1cycle, per diode
-
100 V
20 A
100 A
150 °C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical and Thermal Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF IF=10A - - 0.87 V
Reverse current
IR
VR=100V
- - 7 mA
Thermal resistance
Rth(j-c)
Junction to case
- - 2 °C/W
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© 2016 ROHM Co., Ltd. All rights reserved.
1/5
2016.09 - Rev.A
RB218T100NZ
lElectrical Characteristic Curves
Data Sheet
100
Tj = 150°C
10 Tj = 125°C
1
0.1
0.01
0.001
0
Tj = 75°C
Tj = 25°C
Tj = -25°C
200 400 600 800 1000 1200
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10000
1000
Tj = 150°C
100 Tj = 125°C
10
1 Tj = 75°C
0.1
0.01
Tj = 25°C
0.001
0.0001
0
Tj = -25°C
20 40 60 80 100
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1000
Tj = 25°C
f = 1MHz
830
820
810
Tj=25°C
IF=10A
n=30pcs
800
790
780 Ave. : 764.3mV
770
760
100
0
5 10 15 20 25 30
750
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
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© 2016 ROHM Co., Ltd. All rights reserved.
2/5
2016.09 - Rev.A
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