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PDF RB218T150FH Data sheet ( Hoja de datos )
| Número de pieza | RB218T150FH | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Schottky Barrier Diode
RB218T150FH
Application
Switching power supply
Features
1) Cathode common dual type
2) High reliability
3) Super low IR
Construction
Silicon epitaxial planar type
Dimensions (Unit : mm)
10.0±00..31
3.2±0.2
4.5±00..31
2.8±00..21
1
1.2
1.3
0.8
2.45±0.5 2.45±0.5
(1) (2) (3)
ROHM : TO220FN
1 : Manufacture date
2.6±0.5
0.75±00..015
Datasheet
AEC-Q101 Qualified
Structure
(1) (2) (3)
Anode Cathode Anode
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
VRM
VR
Io
IFSM
Operating junction temperature
Storage temperature
Tj
Tstg
Conditions
Duty≦0.5
Direct reverse voltage
60Hz half sin wave, resistive load,
IO/2 per diode, Tc=115ºC Max.
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle, per diode
-
-
Limits Unit
150 V
150 V
20 A
100 A
150 °C
55 to 150 °C
Electrical Characteristics (Tj= 25°C)
Parameter
Symbol
Forward voltage
Reverse current
Thermal resistance
VF
IR
Rth(j-c)
Conditions
IF=10A
VR=150V
Junction to case
Min. Typ. Max. Unit
- - 0.88 V
- - 20 A
- - 2 °C/W
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.08 - Rev.A
1 page  
RB218T150FH
Electrical Characteristic Curves
Data Sheet
10
Rth(j-a)
1 Rth(j-c)
IM=100mA
IF=25A
time
1ms300s
0.1
0.001 0.01 0.1 1 10 100 1000
TIME : t (s)
Rth-t CHARACTERISTICS
60
50
40 DC
30
20
Sin(θ=180)
10
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
D = 1/2
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta (°C)
DERATING CURVE (Io-Ta)
60
50
40 DC
30 D = 1/2
20
10 Sin(θ=180)
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
0
0 25 50 75 100 125 150
CASE TEMPERATURE : Tc (°C)
DERATING CURVE (Io-Tc)
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2015.08 - Rev.A
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RB218T150FH.PDF ] | |
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