|
ROHM Semiconductor |
Schottky Barrier Diode
RB098BM100
Applications
General rectification
Dimensions (Unit : mm)
Datasheet
Land size figure (Unit : mm)
6.0
Features
1) Power mold type (TO-252)
2) Cathode common dual type
3) High reliability
4) Super low IR
Construction
Silicon epitaxial planar type
12
1.6 1.6
TO-252
2.3 2.3
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
2 : Serial number
Structure
Cathode
Taping specifications (Unit : mm)
Anode Anode
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
VRM
VR
Io
IFSM
Operating junction temperature
Storage temperature
Tj
Tstg
Electrical Characteristics (Tj= 25°C)
Parameter
Symbol
Forward voltage
Reverse current
Thermal resistance
VF
IR
Rth(j-c)
Conditions
Duty≦0.5
Direct reverse voltage
60Hz half sin wave, resistive load,
IO/2 per diode, Tc=120ºC Max.
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle, per diode
-
-
Limits Unit
110 V
100 V
6A
100 A
150 °C
55 to 150 °C
Conditions
IF=3A
VR=100V
Junction to case
Min. Typ. Max. Unit
- - 0.77 V
- - 3 A
- - 6 °C/W
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2016.11 - Rev.C
RB098BM100
Electrical Characteristic Curves
Data Sheet
100
10 Tj = 150°C
Tj = 125°C
1
0.1 Tj = 75°C
0.01
Tj = 25°C
Tj = 25°C
0.001
0
200 400 600 800 1000 1200
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10000
1000
100
10
1
0.1
0.01
0.001
0.0001
0
Tj = 150°C
Tj = 125°C
Tj = 75°C
Tj = 25°C
Tj = 25°C
20 40 60 80
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
100
1000
Tj = 25°C
f = 1MHz
760
740
Tj=25°C
IF=3A
n=30pcs
720
100
700 Ave. : 688mV
680
10
0
660
10 20 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/5
2016.11 - Rev.C
|