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RB095T-90NZ 반도체 회로 부품 판매점

Schottky Barrier Diode



ROHM Semiconductor 로고
ROHM Semiconductor
RB095T-90NZ 데이터시트, 핀배열, 회로
Schottky barrier diode
RB095T-90NZ
Applications
Switching power supply
Dimensions (Unit : mm)
Features
1) Cathode common type.
(TO-220)
2) Low IR
3) High reliability
Construction
Silicon epitaxial planer
9
Data Sheet
Structure
(1) (2) (3)
Packing Dimensions (Unit : mm)
7
540
34.5
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM 90
VR 90
Io 6
Forward current surge peak (60Hz / 1cyc) (*1)
Junction temperature
IFSM
Tj
100
150
Storage temperature
Tstg 40 to 150
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=127C
Electrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min. Typ. Max.
VF - - 0.75
IR - - 150
jc - - 1.75
Unit
V
V
A
A
C
C
Unit
V
A
C/W
Conditions
IF=3A
VR=90V
junction to case
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/3
2016.09 - Rev.A


RB095T-90NZ 데이터시트, 핀배열, 회로
RB095T-90NZ
Electrical characteristic curves
 
Data Sheet
10
Ta=150C
1 Ta=125C
Ta=75C
0.1
Ta=25C
Ta=-25C
0.01
0
100 200 300 400 500 600 700 800 900
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
100000
10000
1000
Ta=150C Ta=125C
Ta=75°C
100
Ta=25C
10
1 Ta=-25°C
0.1
0.01
0
10 20 30 40 50 60 70 80 90
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
750 200
740
Ta=25C
IF=10A
n=30pcs
180
160
Ta=25C
VR=90V
n=30pcs
140
730 120
100
720 80
710
AVE:715.7mV
700
60
AVE:13.7uA
40
20
0
VF DISPERSION MAP
IR DISPERSION MAP
1000
100
f=1MHz
10
1
0 10 20 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
400
390 Ta=25C
380
f=1MHz
VR=0V
370 n=10pcs
360
350
340
AVE:357.9pF
330
320
310
300
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
10
1
Ifsm 1cyc
8.3ms
AVE:86.0A
IFSM DISPERSION MAP
Ifsm
t
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
30
Ta=25C
25 IF=0.5A
IR=1A
20
Irr=0.25*IR
n=10pcs
15
10
5 AVE:8.30ns
0
trr DISPERSION MAP
100
IM=100mA
IF=6A
1ms time
10 300us
Rth(j-a)
1 Rth(j-c)
1000
100
Ifsm
8.3ms 8.3ms
1cyc
10
1
10
8
6
4
2
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
D=1/2
DC
Sin(θ=180)
0.1
0.001
0.01 0.1 1 10
TIME:t(s)
Rth-t CHARACTERISTICS
100
1000
0
02468
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
10
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/3
2016.09 - Rev.A




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RB095T-90NZ diode

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Schottky Barrier Diode - ROHM Semiconductor