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RB095T-40NZ 반도체 회로 부품 판매점

Schottky Barrier Diode



ROHM Semiconductor 로고
ROHM Semiconductor
RB095T-40NZ 데이터시트, 핀배열, 회로
Schottky barrier diode
RB095T-40NZ
Applications
Switching power supply
Dimensions (Unit : mm)
Features
1) Cathode common type.
(TO-220)
2) Low IR
3) High reliability
Construction
Silicon epitaxial planer
Data Sheet
Structure
(1) (2) (3)
Packing Dimensions (Unit : mm)
7
540
34.5
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM 45
VR 40
Io 6
Forward current surge peak (60Hz / 1cyc) (*1)
Junction temperature
IFSM
Tj
100
150
Storage temperature
Tstg 40 to 150
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=136C
Electrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min. Typ. Max.
VF - - 0.55
IR - - 0.1
jc - - 3
Unit
V
V
A
A
C
C
Unit
V
mA
C/W
Conditions
IF=3A
VR=40V
junction to case
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/3
2016.09 - Rev.A


RB095T-40NZ 데이터시트, 핀배열, 회로
RB095T-40NZ
Electrical characteristic curves
 
Data Sheet
10
Ta=150
1 Ta=125
Ta=75
0.1
Ta=-25
Ta=25
0.01
0
100 200 300 400 500 600
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
700
1000000
100000
10000
1000
100
10
1
0.1
0.01
0
Ta=150Ta=125
Ta=75
Ta=25
Ta=-25
5 10 15 20 25 30 35
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
40
1000
100
10
1
0
f=1MHz
5 10 15 20 25
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
30
500
490
480
470
460
450
300
250
200
150
100
50
0
Ta=25
IF=3A
n=30pcs
AVE:472.9mV
VF DISPERSION MAP
1cyc
8.3ms
AVE:178.0A
IFSM DISPERSION MAP
200
180
160
140
120
100
80
60
40
20
0
30
25
20
15
10
5
0
Ta=25
VR=40V
n=30pcs
AVE:14.2uA
IR DISPERSION MAP
650
640
630
620
610
600
590
580
570
560
550
Ta=25
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
1000
100
Ta=25
f=1MHz
VR=0V
n=10pcs
AVE:617.9pF
Ct DISPERSION MAP
Ifsm
8.3ms 8.3ms
1cyc
AVE:11.40ns
trr DISPERSION MAP
10
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
1000
100
Ifsm
t
100
IM=100mA
IF=3A
1ms time
10
300us
1
Rth(j-a)
Rth(j-c)
10
D=1/2
DC
5 Si(=180)
10
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.1
100 0.001 0.01 0.1 1 10 100 1000
TIME:t(s)
Rth-t CHARACTERISTICS
0
0 2 4 6 8 10
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/3
2016.09 - Rev.A




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RB095T-40NZ diode

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Schottky Barrier Diode - ROHM Semiconductor