RB088T100NZ 반도체 회로 부품 판매점
Schottky Barrier Diode
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 ROHM Semiconductor |
Schottky Barrier Diode
RB088T100NZ
Data Sheet
lApplication
Switching power supply
lFeatures
1) Cathode common type
2) High reliability
3) Super low IR
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
4.5±00..31
10.0±
0.3
0.1
f3.2±0.2
2.8±00..21
lStructure
1
1.2
1.3
0.8
(1) (2) (3)
Anode Cathode Anode
2.6±0.5
2.45±0.5 2.45±0.5
(1) (2) (3)
0.75±00..015
ROHM : TO220FN
1 : Manufacture Date
lPackage Dimensions (Unit : mm)
7 540
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
110 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load, IO/2 per diode, Tc=137ºC Max.
60Hz half sin wave, Non-repetitive at
Ta=25ºC, 1cycle, per diode
Operating junction temperature
Tj
-
100
10
100
150
V
A
A
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical and Thermal Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Forward voltage
VF IF=5A
Reverse current
IR VR=100V
Thermal resistance
Rth(j-c)
Junction to case
Min. Typ. Max. Unit
- - 0.87 V
- - 5 mA
- - 2 °C / W
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/5
2016.09 - Rev.A
RB088T100NZ
lElectrical Characteristic Curves
Data Sheet
100
Tj = 150°C
10 Tj = 125°C
1
Tj = 75°C
0.1 Tj = 25°C
0.01
Tj = -25°C
0.001
0 200 400 600 800 1000 1200 1400
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
1000
100
Tj = 150°C
10
1
0.1
0.01
0.001
0
Tj = 125°C
Tj = 75°C
Tj = 25°C
Tj = -25°C
20 40 60 80 100
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1000
Tj = 25°C
f = 1MHz
760
755
750
Tj=25°C
IF=5A
n=30pcs
745
100 740
Ave. : 731.5mV
735
730
725
10
0
720
10 20 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/5
2016.09 - Rev.A
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제조업체: ROHM Semiconductor
( rohm )
RB088T100NZ diode
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