RB088NS-60 반도체 회로 부품 판매점
Schottky Barrier Diode
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 ROHM Semiconductor |
Schottky Barrier Diode
RB088NS-60
Data Sheet
lApplications
Switching power supply
lFeatures
1) Cathode common dual type
2) High reliability
3) Super low IR
lDimensions (Unit : mm)
(2)
RB088
NS60
1
(1) (3)
lLand size figure (Unit : mm)
11
9.9
2.5
2.54
TO-263S
2.54
lStructure
(2) Cathode
lConstruction
Silicon epitaxial planar type
ROHM : TO-263S JEITA : SC-83
①1 : Manufacture date
lTaping specifications (Unit : mm)
(1) Anode (3) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
VRM
VR
Io
IFSM
Operating junction temperature
Tj
Storage temperature
Tstg
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Forward voltage
Reverse current
Thermal resistance
VF
IR
Rth(j-c)
Conditions
Duty≦0.5
Direct reverse voltage
60Hz half sin wave, resistive load,
IO/2 per diode, Tc=130ºC Max.
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle, per diode
-
-
Limits Unit
60 V
60 V
10 A
50 A
150 °C
-55 to +150 °C
Conditions
IF=5A
VR=60V
Junction to case
Min. Typ. Max. Unit
- - 0.83 V
- - 3 mA
- - 2 °C/W
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© 2016 ROHM Co., Ltd. All rights reserved.
1/5
2016.01 - Rev.A
RB088NS-60
lElectrical Characteristic Curves
Data Sheet
100
10 Tj = 150°C
Tj = 125°C
1
Tj = 75°C
0.1
0.01
Tj = 25°C
Tj = -25°C
0.001
0
200 400 600 800 1000 1200
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10000
1000
Tj = 150°C
Tj = 125°C
100 Tj = 75°C
10
1 Tj = 25°C
0.1
0.01
Tj = -25°C
0.001
0.0001
0
10 20 30 40 50
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
60
1000
100
Tj = 25°C
f = 1MHz
10
0
10 20 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
800
Tj=25°C
IF=5A
780 n=30pcs
760
740 Ave. : 720mV
720
700
VF DISPERSION MAP
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/5
2016.01 - Rev.A
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제조업체: ROHM Semiconductor
( rohm )
RB088NS-60 diode
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