|
ROHM Semiconductor |
Schottky Barrier Diode
RB088BM150
lApplication
Switching power supply
lDimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
6.0
lFeatures
1) Power mold type (TO-252)
2) Cathode common dual type
3) High reliability
4) Super low IR
lConstruction
Silicon epitaxial planar type
1
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
lTaping specifications (Unit : mm)
1.6 1.6
TO-252
2.3 2.3
lStructure
(2)
Cathode
(1) (3)
Anode Anode
lAbsolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Limits
Unit
Conditions
Repetitive Peak Reverse Voltage
VRM 150 V Duty≦0.5
Reverse Voltage
Average forward rectified current
Non-repetitive Forward Current Surge Peak
Operating Junction Temperature
VR
Io
IFSM
Tj
150 V Direct Reverse Voltage
10
A
60Hz half sin Wave resistive load,
Tc=100°C max., 1/2 Io per diode
50
A
60Hz half sin wave,
Non-repetitive at Ta=25ºC, per diode
150 °C
-
Storage Temperature
Tstg -55 to +150 °C
-
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
Reverse current
VF - 0.78 0.88 V IF=5.0A
IR - - 15 mA VR=150V
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.10 - Rev.A
RB088BM150
lElectrical characteristic curves
Data Sheet
10 1000000
Tj = 75°C
1 Tj = 125°C
Tj = 150°C
0.1
Tj = 25°C
100000
10000
1000
100
10
Tj = -25°C
0.01
0 100 200 300 400 500 600 700 800 900
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
1
0.1
0
Tj = 150°C
Tj = 125°C
Tj = 75°C
Tj = 25°C
Tj = -25°C
50 100 150
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1000
100
f = 1MHz
10
0
5 10 15 20 25
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
30
840
830
820
810
800
790
780
770
760
750
Tj=25°C
IF=5A
n=30pcs
AVE : 769.3mV
VF DISPERSION MAP
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/5
2014.10 - Rev.A
|