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ROHM Semiconductor |
RB058L-60
Data Sheet
Schottky Barrier Diode
RB058L-60
lApplications
General rectification
lExternal Dimensions(Unit : mm)
2.6±0.2
lFeatures
1)Small power mold type.(PMDS)
2)High reliability
3)AEC-Q101 qualified
lConstruction
Silicon epitaxial
93
12
0.1±0.02
0.1
1.5±0.2
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
1 2 Manufacture Date
lTaping Dimensions(Unit : mm)
2.0±0.05
4.0±0.1
lLand Size Figure(Unit : mm)
2.0
PMDS
lStructure
φ 1.55±0.05
0.3
2.9±0.1
4.0±0.1
lAbsolute Maximum Ratings(Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
VRM
VR
Average rectified forward current (*1)
Io
Forward current surge peak (60Hz・1cyc)
IFSM
Junction temperature
Tj
Storage temperature
Tstg
(*1)Mounting on epoxi board. 180°Half sine wave
lElectrical Characteristics(Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
VF
IR
Limits
60
60
3
70
150
-55 to +150
Min. Typ. Max.
- - 0.64
- - 4.0
φ 1.55
Unit
V
V
A
A
°C
°C
2.8MAX
Unit Conditions
V IF=3.0A
mA VR=60V
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© 2012 ROHM Co., Ltd. All rights reserved.
1/4
2012.08 - Rev.A
RB058L-60 Data Sheet
10
Ta = 150°C
1
Ta = 125°C
0.1
Ta = 75°C
Ta = 25°C
0.01
100
Ta = -25°C
200 300 400 500 600
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
700
1000
f = 1MHz
100
10
0
700
600
500
400
300
200
100
0
5 10 15 20 25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
Ta=25°C
VR=60V
n=30pcs
AVE : 304.2nA
IR DISPERSION MAP
10000
1000
Ta = 150°C
100
Ta = 125°C
10
1
0.1
0.01
0.001
0
Ta = 75°C
Ta = 25°C
Ta = -25°C
10 20 30 40 50 60
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
650
640 Ta=25°C
VF=3A
630 n=30pcs
620
610
600 AVE : 585.4mV
590
580
570
560
550
VF DISPERSION MAP
800
Ta=25°C
775 f=1MHz
VR=0V
n=10pcs
750
725
AVE : 683.5pF
700
675
650
Ct DISPERSION MAP
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© 2012 ROHM Co., Ltd. All rights reserved.
2/4
2012.08 - Rev.A
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