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ROHM Semiconductor |
Schottky Barrier Diode
BAT54CHM
Data Sheet
lApplication
Small current rectification
lDimensions (Unit : mm)
lLand Size Figure (Unit : mm)
1.9
lFeatures
1) Small mold type
(SOT-23)
2) High reliability
3) Low VF
lConstruction
Silicon epitaxial planar type
5D
ROHM : SSD3
JEDEC : SOT-23
JEITA : -
lTaping Dimensions (Unit : mm)
2.4
1.0MIN
SOT-23
0.8MIN
lStructure
(3)
(1) Anode
(2) Anode
(3) Cathode
(1) (2)
: T116
lAbsolute Maximum Ratings (Ta= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Forward current
Repetitive peak forward current
Non-repetitive forward surge current
VRM
VR
IF
IFRM
IFSM
Junction temperature
Tj
Storage temperature
Tstg
Conditions
Duty≦0.5
Direct reverse voltage
Direct current, Per diode
t ≦1s, Duty≦0.5, Per diode
Square wave, tp<10ms,
Non-repetitive at Ta=25ºC, Per diode
-
-
Limits Unit
30 V
30 V
200 mA
300 mA
600 mA
150 °C
-55 to +150 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
Reverse recovery time
Capacitance between terminals
VF1 IF=0.1mA -
VF2 IF=1mA -
VF3 IF=10mA -
VF4 IF=30mA -
VF5 IF=100mA -
IR
VR=25V
-
trr IF=10mA, RL=50Ω, Irr=0.1×IR -
Ct f=1MHz, VR=1V -
- 240 mV
- 320 mV
- 400 mV
- 500 mV
- 800 mV
- 2 mA
- 50 ns
- 12 pF
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© 2016 ROHM Co., Ltd. All rights reserved.
1/3
2016.08 - Rev.A
BAT54CHM
lElectrical Characteristic Curves
Data Sheet
1000
100 Tj = 150°C
10 Tj = 125°C
Tj = 75°C
1 Tj = 25°C
0.1
0
Tj = -25°C
100 200 300 400 500 600 700
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10000
1000
Tj = 150°C
100
10
Tj = 125°C
Tj = 75°C
1 Tj = 25°C
0.1
0.01
Tj = -25°C
0.001
0.0001
0
5 10 15 20 25
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
30
100 100
Tj = 25°C
f = 1MHz
IFSM
8.3 8.3
ms ms
1cyc
Ta=25°C
10 10
1
0 5 10 15 20 25 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
1
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
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© 2016 ROHM Co., Ltd. All rights reserved.
2/3
2016.08 - Rev.A
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