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BAV116HWFQ 반도체 회로 부품 판매점

SURFACE MOUNT LOW LEAKAGE DIODE



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BAV116HWFQ 데이터시트, 핀배열, 회로
BAV116HWFQ
SURFACE MOUNT LOW LEAKAGE DIODE
Product Summary (@TA = +25°C)
VR IR
85V 5nA
trr
3µs
Description
The BAV116HWFQ is an 85V, 5nA and 3µs switching diode that is
optimized for ultra-low leakage current.
Features
Ultra Low Leakage Current (5nA @ VR = 75V)
Flat Leadframe Design for Improved Thermal Transfer
Low Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Applications
It is ideally suited for use in applications such as the following:
Mobile
Portable Electronics
Consumer Electronics
Automotive
Mechanical Data
Case: SOD123F
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: Cathode Bar
Terminals: Matte Tin Finish Annealed over Copper Alloy
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.018 grams (Approximate)
SOD123F
Top View
Bottom View
Ordering Information (Note 5)
Notes:
Product
BAV116HWFQ-7
Compliance
Automotive
Case
SOD123F
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOD123F
TW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex.: C = 2015)
M = Month (ex: O = October)
Bar Denotes Cathode Side
Date Code Key
Year
Code
Month
Code
2015
C
Jan Feb
12
BAV116HWFQ
Document number: 38274 Rev. 1 - 2
2016
D
Mar
3
2017
E
Apr May
45
2018
F
Jun Jul
67
1 of 5
www.diodes.com
2019
G
Aug
8
Sep
9
2020
H
Oct
O
2021
I
Nov Dec
ND
September 2015
© Diodes Incorporated


BAV116HWFQ 데이터시트, 핀배열, 회로
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 6)
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current
@ t = 1.0µs
@ t = 1.0ms
@ t = 1.0s
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
IFRM
IFSM
BAV116HWFQ
Value
85
60
215
500
4.0
1.0
0.5
Unit
V
V
mA
mA
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance Junction to Ambient Air (Note 6)
Thermal Resistance Junction to Solder Point
Operating and Storage Temperature Range
Symbol
PD
RθJA
RθJSP
TJ, TSTG
Value
375
330
70
-65 to +150
Unit
mW
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 7)
Forward Voltage
Leakage Current (Note 7)
Total Capacitance
Reverse Recovery Time
Symbol Min Typ Max Unit
Test Condition
V(BR)R
85
V IR = 100µA
0.9 IF = 1.0mA
VF
1.0
1.1
V IF = 10mA
IF = 50mA
1.25
IF = 150mA
IR
5.0
80
nA VR = 75V
nA VR = 75V, TJ = +150°C
CT 2 pF VR = 0, f = 1.0MHz
trr
3.0
µs
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100
Notes:
6. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
7. Short duration pulse test used to minimize self-heating effect.
BAV116HWFQ
Document number: 38274 Rev. 1 - 2
2 of 5
www.diodes.com
September 2015
© Diodes Incorporated




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BAV116HWF

SURFACE MOUNT LOW LEAKAGE DIODE - Diodes



BAV116HWFQ

SURFACE MOUNT LOW LEAKAGE DIODE - Diodes