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ZHCS750 반도체 회로 부품 판매점

SURFACE MOUNT SCHOTTKY BARRIER DIODE



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Diodes
ZHCS750 데이터시트, 핀배열, 회로
Product Summary
VRRM
(V)
40
IO
(A)
0.75
VF(MAX) @ 0.75A
(V)
0.49
IR(MAX) @ VR=30V
(µA)
100
Description and Applications
DC – DC Converters
Mobile Telecomms
PCMIA
ZHCS750
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features and Benefits
High current capability (IF = 750mA)
Low VF
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Weight: 0.0089 grams (approximate)
Top View
Ordering Information (Note 4)
Notes:
Device
ZHCS750TA
Packaging
SOT23
Shipping
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZS7
ZS7 = Product Type Marking Code
ZHCS750
Document number: DS33218 Rev. 4 - 2
1 of 5
www.diodes.com
January 2014
© Diodes Incorporated


ZHCS750 데이터시트, 핀배열, 회로
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Continuous Reverse Voltage
Continuous Forward Current
Forward Voltage @ IF = 750mA
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current
t 100μs
t 10ms
Symbol
VR
IF
VF
IFAV
IFSM
ZHCS750
Value
40
750
490
1500
12
5.2
Units
V
mA
mV
mA
A
A
Thermal Characteristics
Characteristic
Power Dissipation, TA = +25°C
Junction Temperature
Storage Temperature Range
Symbol
PD
TJ
TSTG
Value
500
125
-55 to +150
Unit
mW
°C
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage
Forward Voltage (Note 5)
Reverse Current (Note 6)
Diode Capacitance
Symbol
V(BR)R
VF
IR
CD
Min
40
Typ
60
225
235
290
340
390
440
530
50
25
Reverse Recovery Time
Trr — 12
Notes:
5. Measured under pulsed conditions. Pulse width = 300μS. Duty cycle 2%.
6. Short duration pulse test used to minimize self-heating effect.
Max
280
310
350
420
490
540
650
100
Unit Test Condition
V IR = 300µA
IF = 50mA
IF = 100mA
IF = 250mA
mV IF = 500mA
IF = 750mA
IF = 1A
IF = 1.5A
µA VR = 30V
pF f = 1MHz, VR = 25V
Switched from IF = 500mA to
ns IR = 500mA
Measured @ IR = 50mA
ZHCS750
Document number: DS33218 Rev. 4 - 2
2 of 5
www.diodes.com
January 2014
© Diodes Incorporated




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