|
Diodes |
Product Summary
VRRM
(V)
40
IO
(A)
0.75
VF(MAX) @ 0.75A
(V)
0.49
IR(MAX) @ VR=30V
(µA)
100
Description and Applications
• DC – DC Converters
• Mobile Telecomms
• PCMIA
ZHCS750
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features and Benefits
• High current capability (IF = 750mA)
• Low VF
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Weight: 0.0089 grams (approximate)
Top View
Ordering Information (Note 4)
Notes:
Device
ZHCS750TA
Packaging
SOT23
Shipping
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZS7
ZS7 = Product Type Marking Code
ZHCS750
Document number: DS33218 Rev. 4 - 2
1 of 5
www.diodes.com
January 2014
© Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Continuous Reverse Voltage
Continuous Forward Current
Forward Voltage @ IF = 750mA
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current
t ≤ 100μs
t ≤ 10ms
Symbol
VR
IF
VF
IFAV
IFSM
ZHCS750
Value
40
750
490
1500
12
5.2
Units
V
mA
mV
mA
A
A
Thermal Characteristics
Characteristic
Power Dissipation, TA = +25°C
Junction Temperature
Storage Temperature Range
Symbol
PD
TJ
TSTG
Value
500
125
-55 to +150
Unit
mW
°C
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage
Forward Voltage (Note 5)
Reverse Current (Note 6)
Diode Capacitance
Symbol
V(BR)R
VF
IR
CD
Min
40
—
—
—
—
—
—
—
—
—
Typ
60
225
235
290
340
390
440
530
50
25
Reverse Recovery Time
Trr — 12
Notes:
5. Measured under pulsed conditions. Pulse width = 300μS. Duty cycle ≤ 2%.
6. Short duration pulse test used to minimize self-heating effect.
Max
—
280
310
350
420
490
540
650
100
—
—
Unit Test Condition
V IR = 300µA
IF = 50mA
IF = 100mA
IF = 250mA
mV IF = 500mA
IF = 750mA
IF = 1A
IF = 1.5A
µA VR = 30V
pF f = 1MHz, VR = 25V
Switched from IF = 500mA to
ns IR = 500mA
Measured @ IR = 50mA
ZHCS750
Document number: DS33218 Rev. 4 - 2
2 of 5
www.diodes.com
January 2014
© Diodes Incorporated
|