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ZHCS1000QTA 반도체 회로 부품 판매점

SURFACE MOUNT SCHOTTKY BARRIER DIODE



Diodes 로고
Diodes
ZHCS1000QTA 데이터시트, 핀배열, 회로
Product Summary
VRRM (V)
40
IO (A)
1
VF(TYP) @ 1A
(V)
0.425
IR(TYP) @ VR=30V
(μA)
50
ZHCS1000QTA
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features and Benefits
High Current Capability (IF = 1A)
Low VF
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Applications
DC-DC Converters
Mobile Telecomms
Blocking Diodes
Reverse Polarity Protection
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0089 grams (Approximate)
Top View
Ordering Information (Note 5)
Notes:
Device
Case
Packaging
ZHCS1000QTA
SOT23
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. For more information, please refer to
http://www.diodes.com/product_compliance_definitions.html
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZS1
ZS1 = Product Type Marking Code
ZHCS1000QTA
Document number: DS38370 Rev. 1 - 2
1 of 6
www.diodes.com
December 2015
© Diodes Incorporated


ZHCS1000QTA 데이터시트, 핀배열, 회로
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Continuous Reverse Voltage
Forward Voltage @ IF = 1A (Typ)
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current
t100μs
t10ms
Symbol
VR
IO
VF
IF(AV)
IFSM
ZHCS1000QTA
Value
40
1
425
1750
12
5.2
Units
V
A
mV
mA
A
A
Thermal Characteristics
Characteristic
Power Dissipation, TA = +25°C
Junction Temperature
Storage Temperature Range
Symbol
PD
TJ
TSTG
Value
500
+125
-55 to +150
Unit
mW
°C
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage
Forward Voltage (Note 6)
Reverse Current (Note 7)
Total Capacitance
Symbol
V(BR)R
VF
IR
CT
Min
40
Typ
60
240
265
305
355
390
425
495
420
50
25
Reverse Recovery Time
tRR 12
Notes:
6. Measured under pulsed conditions. Pulse width = 300μS.
7. Short duration pulse test used to minimize self-heating effect.
Max
270
290
340
400
450
500
600
100
Unit
V
mV
μA
pF
ns
Test Condition
IR = 300μA
IF = 50mA
IF = 100mA
IF = 250mA
IF = 500mA
IF = 750mA
IF = 1A
IF = 1.5A
IF = 1A, TA = +100°C
VR = 30V
f = 1MHz, VR = 30V
Switched from IF = 500mA to
IR = 500mA
Measured @ IR = 50mA
ZHCS1000QTA
Document number: DS38370 Rev. 1 - 2
2 of 6
www.diodes.com
December 2015
© Diodes Incorporated




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SURFACE MOUNT SCHOTTKY BARRIER DIODE - Diodes