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Diodes |
Product Summary
VRRM (V)
40
IO (A)
1
VF(TYP) @ 1A
(V)
0.425
IR(TYP) @ VR=30V
(μA)
50
ZHCS1000QTA
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features and Benefits
High Current Capability (IF = 1A)
Low VF
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Applications
DC-DC Converters
Mobile Telecomms
Blocking Diodes
Reverse Polarity Protection
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0089 grams (Approximate)
Top View
Ordering Information (Note 5)
Notes:
Device
Case
Packaging
ZHCS1000QTA
SOT23
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. For more information, please refer to
http://www.diodes.com/product_compliance_definitions.html
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZS1
ZS1 = Product Type Marking Code
ZHCS1000QTA
Document number: DS38370 Rev. 1 - 2
1 of 6
www.diodes.com
December 2015
© Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Continuous Reverse Voltage
Forward Voltage @ IF = 1A (Typ)
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current
t100μs
t10ms
Symbol
VR
IO
VF
IF(AV)
IFSM
ZHCS1000QTA
Value
40
1
425
1750
12
5.2
Units
V
A
mV
mA
A
A
Thermal Characteristics
Characteristic
Power Dissipation, TA = +25°C
Junction Temperature
Storage Temperature Range
Symbol
PD
TJ
TSTG
Value
500
+125
-55 to +150
Unit
mW
°C
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage
Forward Voltage (Note 6)
Reverse Current (Note 7)
Total Capacitance
Symbol
V(BR)R
VF
IR
CT
Min
40
—
—
—
—
—
—
—
—
—
—
Typ
60
240
265
305
355
390
425
495
420
50
25
Reverse Recovery Time
tRR — 12
Notes:
6. Measured under pulsed conditions. Pulse width = 300μS.
7. Short duration pulse test used to minimize self-heating effect.
Max
—
270
290
340
400
450
500
600
—
100
—
—
Unit
V
mV
μA
pF
ns
Test Condition
IR = 300μA
IF = 50mA
IF = 100mA
IF = 250mA
IF = 500mA
IF = 750mA
IF = 1A
IF = 1.5A
IF = 1A, TA = +100°C
VR = 30V
f = 1MHz, VR = 30V
Switched from IF = 500mA to
IR = 500mA
Measured @ IR = 50mA
ZHCS1000QTA
Document number: DS38370 Rev. 1 - 2
2 of 6
www.diodes.com
December 2015
© Diodes Incorporated
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