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RF201L2S 반도체 회로 부품 판매점

Fast Recovery Diode



ROHM Semiconductor 로고
ROHM Semiconductor
RF201L2S 데이터시트, 핀배열, 회로
Data Sheet
Fast Recovery Diode
RF201L2S
Applications
General rectification
Features
1)Small power mold type. (PMDS)
2)Ultra low VF
3)Ultra high switching speed
4)Low switching loss
Construction
Silicon epitaxial planer
Dimensions(Unit : mm)
2.6±0.2
Land size figure (Unit : mm)
2.0
6 67
①②
1.5±0.2
0.1±0.02
    0.1
2.0±0.2
PMDS
Structure
ROHM : PMDS
JEDEC : SOD-106
① ② Manufacture date
Taping dimensions(Unit : mm)
Absolute maximum ratings(Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
Forward current surge peak (60Hz1cyc)
Junction temperature
IFSM
Tj
Storage temperature
Tstg
(*1)Mounted on epoxy board. Tc=95 C max.
Limits
200
200
2
20
150
55 to 150
Unit
V
V
A
A
°C
°C
Electrical characteristics(Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
VF - 0.815 0.87
Reverse current
IR - 0.01 10
Reverse recovery time
trr - 14 25
Unit Conditions
V IF=2.0A
μA VR=200V
ns IF=0.5A,IR=1A,Irr=0.25*IR
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/3
2013.08 Rev.C


RF201L2S 데이터시트, 핀배열, 회로
RF201L2S
DataSheet
10
75℃
1
150℃
0.1 125℃
25℃
0.01
-25℃
10000
1000
100
10
1
0.001
0.2
0.3 0.4 0.5 0.6 0.7 0.8
FORWARD VOLTAGE:VF(V)
VF-IF CHARACTERISTICS
0.9
0.1
0
850 100
Ta=25℃
90
840
IF=2A
n=30pcs
80
70
830
AVE:815.3mV
60
50
820 40
30
810 20
10
800 0
VF DISPERSION MAP
150℃
75℃
125℃
25℃
-25℃
1000
100
10
f=1MHz
50 100 150
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
200
1
0 5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Ta=25℃
VR=200V
n=30pcs
AVE:16.6ns
IR DISPERSION MAP
150
140
130
120
110
100
90
80
70
60
50
f=1MHz
VR=0V
AVE:102.3pF
Ct DISPERSION MAP
250
200
150
100
50
0
200
150
100
50
0
1
Ifsm 1cyc
8.3ms
AVE:108.0A
IFSM DISRESION MAP
Ifsm
t
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
30 1000
Ta=25℃
25 IF=0.5A
IR=1A
20
Irr=0.25*IR
n=10pcs
100
15
AVE:14.3ns
10
10
5
Ifsm
8.3ms 8.3ms
1cyc
0
1000
100
trr DISPERSION MAP
Mounted on epoxy board
IM=10m
A
IF=100mA
1m time
300u
Rth(j-a)
Rth(j-c)
10
1
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
3
2.5
2
Sin(θ=180)
1.5
D=1/2
DC
1
1
0.5
0.1
0.001
0.01 0.1 1 10 100
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
0
123
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
4
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/3
2013.08 Rev.C




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RF201L2S diode

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Fast Recovery Diode - ROHM Semiconductor