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ROHM Semiconductor |
Data Sheet
Fast Recovery Diode
RF201L2S
Applications
General rectification
Features
1)Small power mold type. (PMDS)
2)Ultra low VF
3)Ultra high switching speed
4)Low switching loss
Construction
Silicon epitaxial planer
Dimensions(Unit : mm)
2.6±0.2
Land size figure (Unit : mm)
2.0
6 67
①②
1.5±0.2
0.1±0.02
0.1
2.0±0.2
PMDS
Structure
ROHM : PMDS
JEDEC : SOD-106
① ② Manufacture date
Taping dimensions(Unit : mm)
Absolute maximum ratings(Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
Forward current surge peak (60Hz・1cyc)
Junction temperature
IFSM
Tj
Storage temperature
Tstg
(*1)Mounted on epoxy board. Tc=95 C max.
Limits
200
200
2
20
150
55 to 150
Unit
V
V
A
A
°C
°C
Electrical characteristics(Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
VF - 0.815 0.87
Reverse current
IR - 0.01 10
Reverse recovery time
trr - 14 25
Unit Conditions
V IF=2.0A
μA VR=200V
ns IF=0.5A,IR=1A,Irr=0.25*IR
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© 2012 ROHM Co., Ltd. All rights reserved.
1/3
2013.08 Rev.C
RF201L2S
DataSheet
10
75℃
1
150℃
0.1 125℃
25℃
0.01
-25℃
10000
1000
100
10
1
0.001
0.2
0.3 0.4 0.5 0.6 0.7 0.8
FORWARD VOLTAGE:VF(V)
VF-IF CHARACTERISTICS
0.9
0.1
0
850 100
Ta=25℃
90
840
IF=2A
n=30pcs
80
70
830
AVE:815.3mV
60
50
820 40
30
810 20
10
800 0
VF DISPERSION MAP
150℃
75℃
125℃
25℃
-25℃
1000
100
10
f=1MHz
50 100 150
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
200
1
0 5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Ta=25℃
VR=200V
n=30pcs
AVE:16.6ns
IR DISPERSION MAP
150
140
130
120
110
100
90
80
70
60
50
f=1MHz
VR=0V
AVE:102.3pF
Ct DISPERSION MAP
250
200
150
100
50
0
200
150
100
50
0
1
Ifsm 1cyc
8.3ms
AVE:108.0A
IFSM DISRESION MAP
Ifsm
t
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
30 1000
Ta=25℃
25 IF=0.5A
IR=1A
20
Irr=0.25*IR
n=10pcs
100
15
AVE:14.3ns
10
10
5
Ifsm
8.3ms 8.3ms
1cyc
0
1000
100
trr DISPERSION MAP
Mounted on epoxy board
IM=10m
A
IF=100mA
1m time
300u
Rth(j-a)
Rth(j-c)
10
1
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
3
2.5
2
Sin(θ=180)
1.5
D=1/2
DC
1
1
0.5
0.1
0.001
0.01 0.1 1 10 100
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
0
123
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
4
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© 2013 ROHM Co., Ltd. All rights reserved.
2/3
2013.08 Rev.C
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