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PDF AD500-9 Data sheet ( Hoja de datos )
| Número de pieza | AD500-9 | |
| Descripción | Avalanche Photodiode | |
| Fabricantes | Silicon Sensor | |
| Logotipo |  |
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AD500-9 TO52S1F2
Avalanche Photodiode for NIR
with bandpass filter for 905 nm
Special characteristics:
quantum efficiency > 70 % at λ 890 - 915 nm
high speed, low noise
500 µm diameter active area
low slope multiplication curve
Parameters:
Active Area
Dark Current 1)
(M = 100)
Total Capacitance 1)
(M = 100)
Breakdown Voltage UBR
(at ID = 2µA)
Temperature Coefficient of UBR
Spectral Responsivity
(at 905 nm; M = 100)
Cut-off Frequency
(-3dB; M = 100)
905 nm
Rise Time
(M = 100; 50 Ω)
905 nm
Optimum Gain
"Excess Noise" factor
(M = 100)
"Excess Noise" index
(M = 100)
Noise Current
(M = 100)
N.E.P.
(M = 100, 905 nm)
Operating Temperature
Storage Temperature
0.196 mm2
∅ 500 µm
max. 5 nA
typ. 0.5 - 1 nA
typ. 1.2 pF
120 - 300 V
typ. > 200 V
typ. 1.55 V/K
min. 48 A/W
typ. 52 A/W
typ. 0.5 GHz
550 ps
50 - 60
typ. 2.5
typ. 0.2
max. 1 pA/Hz½
max. 2 * 10-14 W/Hz½
-20 ... +70 °C
-55 ... +100 °C
1) measurement conditions:
Setup of photo current 10 nA at M = 1 and irradiation by an IRED
(905 nm, 80 nm bandwidth).
Increase the photo current up to 1 µA, (M = 100) by internal multiplication
due to an increasing bias voltage.
RoHS compliant
Package (TO52S1F2):
PIN 4
CASE
PIN 1
CATHODE
PIN 3
ANODE
PIN 1
PIN 4
PIN 3
∅ 4.70
∅ 2.0 min.
∅ 2.54
PIN CIRCLE
Chip: AD500-9
∅ 0.500 diameter
active area
∅ 5.40
∅ 0.46
Filter removed
to show APD
placement
www.silicon-sensor.com
Version: 09-08-31
Order number: 500590
www.pacific-sensor.com
1 page | ||
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| PDF Descargar | [ Datasheet AD500-9.PDF ] | |
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