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Infineon |
Silicon PIN Diode
• High voltage current controlled RF resistor
for RF attenuator and switches
• Frequency range above 1 MHz up to 6 GHz
• Very low capacitance at zero volt reverse bias
at frequencies above 1 GHz (typ. 0.17 pF)
• Low forward resistance (typ. 2.1 Ω @ 10 mA)
• Very low signal distortion
• Pb-free (RoHS compliant) package
• Qualified according AEC Q1011)
BAR64...
BAR64-02EL
BAR64-02V
BAR64-03W
BAR64-04
BAR64-04W
!
, ,
BAR64-05
BAR64-05W
!
, ,
BAR64-06
BAR64-06W
!
, ,
Type
BAR64-02EL*
BAR64-02V
BAR64-03W
BAR64-04
BAR64-04W
BAR64-05
BAR64-05W
BAR64-06
BAR64-06W
Package
TSLP-2-19
SC79
SOD323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
Configuration
single, leadless
single
single
series
series
common cathode
common cathode
common anode
common anode
1*BAR64-02EL is not qualified according AEC Q101
LS(nH)
0.4
0.6
1.8
1.8
1.4
1.8
1.4
1.8
1.4
Marking
OE
O
blue 2
PPs
PPs
PRs
PRs
PSs
PSs
1 2013-06-10
BAR64...
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Total power dissipation
BAR64-02EL, TS ≤ 135 °C
BAR64-02V, TS ≤ 125 °C
BAR64-03W, TS ≤ 25 °C
BAR64-04, -05, -06, TS ≤ 65 °C
BAR64-04W, -05W, -06W, TS ≤ 115 °C
VR
IF
Ptot
Junction temperature
Operating temperature range
Storage temperature
Tj
Top
Tstg
Value
150
100
250
250
250
250
250
150
-55 ... 125
-55 ... 150
Thermal Resistance
Parameter
Junction - soldering point1)
BAR64-02EL
BAR64-02V, -04W, -05W, -06W
BAR64-03W
BAR64-04, -05, -06
Symbol
RthJS
Value
≤ 60
≤ 140
≤ 370
≤ 340
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 5 µA
Forward voltage
IF = 50 mA
V(BR)
VF
150 -
-
- - 1.1
Unit
V
2 2013-06-10
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