|
SIEMENS |
Silicon PIN Diode
Preliminary Data
q RF switch, RF attenuator for frequencies above
10 MHz
q Very low IM distortion
BA 597
BA 597
Type
BA 597
Ordering Code
(taped)
UPON INQUIRY
Pin Configuration Marking
12
C A yellow/R
Maximum Ratings
Parameter
Reverse voltage
Forward current
Total power dissipation TS ≤ 40 °C1)
Junction temperature
Storage temperature range
Symbol
VR
IF
Ptot
Tj
Tstg
Values
50
100
250
150
– 55 … + 150
Package
SOD-323
Unit
V
mA
mW
°C
°C
1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm.
Semiconductor Group
1
10.94
BA 597
Characteristics per Diode
at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Reverse current
VR = 30 V
IR
Forward voltage
IF = 100 mA
VF
Diode capacitance
VR = 10 V, f = 1 MHz
VR = 0 V, f = 100 MHz
CT
Forward resistance
IF = 1.5 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
rf
Charge carrier lifetime
τL
IF = 10 mA, IR = 6 mA, IR = 3 mA
min.
–
–
–
–
–
–
–
Value
typ. max.
– 20
0.9 –
0.52
0.27
–
–
22 –
4.2 –
2.5 –
Unit
nA
V
pF
Ω
µs
Semiconductor Group
2
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