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Infineon |
Silicon Deep Trench PIN Diodes
• Optimized for low bias current antenna
switches in hand held applications
• Very low capacitance at zero volt
reverse bias at frequencies
above 1GHz (typ. 0.19 pF)
• Low forward resistance
(typ. 1.3 Ω @ IF = 3 mA)
• Improved ON / OFF mode harmonic
distortion balance
• Pb-free (RoHS compliant) package
BAR90...
BAR90-02LRH
BAR90-02LS
12
BAR90-098LRH
4
D1
3
D2
12
Type
BAR90-02LRH
BAR90-02LS
BAR90-098LRH
Package
TSLP-2-7
TSSLP-2-1
TSLP-4-7
Configuration
single, leadless
single, leadless
anti-parallel pair, leadless
LS(nH)
0.4
0.2
0.4
Marking
R9
J
T9
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Total power dissipation
TS ≤ 137 °C, BAR90-02LS
TS ≤ 133°C, all others
Junction temperature
Operating temperature range
Storage temperature
VR
IF
Ptot
Tj
Top
Tstg
1
Value
80
100
150
250
150
-55 ... 125
-55 ... 150
Unit
V
mA
mW
°C
2012-10-09
BAR90...
Thermal Resistance
Parameter
Junction - soldering point1)
BAR90-02LS
All others
Symbol
RthJS
Value
≤ 90
≤ 65
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 5 µA
Reverse current
VR = 60 V
Forward voltage
IF = 3 mA
IF = 100 mA
V(BR)
IR
VF
80 -
-
- - 50
0.75 0.81 0.87
- 0.9 1
Unit
V
nA
V
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2 2012-10-09
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