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Galaxy Microelectronics |
Production specification
Surface Mount Schottky Barrier Diode
BAT54T/AT/CT/ST
FEATURES
z Low forward voltage drop.
Pb
z Fast switching.
Lead-free
z Ultra-small surface mount package.
z PN junction guard ring for transient and
ESD protection.
APPLICATIONS
z Schottky barrier diodes.
BAT54T
BAT54AT
BAT54CT
BAT54ST
SOT-523
ORDERING INFORMATION
Type No.
Marking
BAT54T
BAT54AT
BAT54CT
BAT54ST
L1
L2
L3
L4
Package Code
SOT-523
SOT-523
SOT-523
SOT-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
VRRM
VRWM
VR
IF
IFRM
IFSM
Parameter
Peak repetitive reverse voltage
Working peak reverse voltage
DC reverse voltage
Forward continuous voltage
Repetitive peak forward voltage
Non-repetitive peak forward surge current
@t<1.0s
Value
30
200
300
600
Pd
RθJA
Tj,Tstg
Power dissipation
Thermal resistance junction to ambient
Junction and Storage Temperature
150
833
-65 to +150
Units
V
mA
mA
mA
mW
℃/W
℃
H011
Rev.A
www.gmicroelec.com
1
Production specification
Surface Mount Schottky Barrier Diode
BAT54T/AT/CT/ST
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX
Reverse breakdown voltage V(BR)R
IR=100μA
30
Leakage current
IR
Forward voltage
VF
Typical total capacitance
Reverse recovery Time
CT
trr
VR=25V
IF=0.1mA
IF=1.0mA
IF=10mA
IF=30mA
IF=100mA
VR=1.0V,f=1MHz
IF=IR=10mA,to IR=1.0mA RL=100Ω
2.0
240
320
400
500
1000
10
5.0
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
UNIT
V
μA
mV
pF
ns
H011
Rev.A
www.gmicroelec.com
2
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