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BAT54AW 반도체 회로 부품 판매점

Schottky Barrier Diodes



ON Semiconductor 로고
ON Semiconductor
BAT54AW 데이터시트, 핀배열, 회로
BAT54AW
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR 30 V
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
200 mW
1.6 mW/°C
Forward Current (DC)
Non−Repetitive Peak Forward Current
tp < 10 msec
Repetitive Peak Forward Current
Pulse Wave = 1 sec,
Duty Cycle = 66%
IF
IFSM
IFRM
200 Max
600
300
mA
mA
mA
Junction Temperature
TJ
−55 to 150
°C
Storage Temperature Range
Tstg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
30 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
SOT−323
CASE 419
STYLE 4
ANODE
3
CATHODE
1
2
CATHODE
MARKING DIAGRAM
B7M G
G
1
B7 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
BAT54AWT1G
SBAT54AWT1G
SOT−323
(Pb−Free)
SOT−323
(Pb−Free)
3,000/Tape & Reel
3,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
October, 2015 − Rev. 5
1
Publication Order Number:
BAT54AWT1/D


BAT54AW 데이터시트, 핀배열, 회로
BAT54AW
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
30
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
Reverse Leakage
(VR = 25 V)
IR
Forward Voltage
(IF = 0.1 mA)
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 30 mA)
(IF = 100 mA)
VF
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr
Typ
7.6
0.5
0.22
0.29
0.35
0.41
0.52
Max
10
2.0
0.24
0.32
0.40
0.50
0.80
5.0
Unit
V
pF
mAdc
V
ns
820 W
+10 V
2k
100 mH
0.1 mF
IF
0.1 mF
tr tp
10%
T
IF
trr T
50 W OUTPUT
PULSE
GENERATOR
DUT
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
2




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