Z4W37V 반도체 회로 부품 판매점
Zener Diode / Rectifier
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 KEC |
SEMICONDUCTOR
TECHNICAL DATA
BEST SUITED FOR OVERVOLTAGE PROTECTION
OF ELECTRONIC SYSTEM :
ELECTRONIC SYSTEM FOR USE IN AUTOMOBILES
ELECTRONIC SYSTEM FOR COMMERCIAL USE
ELECTRONIC SYSTEM FOR INDUSTRIAL USE
FOR COMMUNICATIONS, CONTROLS, MEASURING
INSTRUMENTS, ETC.
FEATURES
Excellent clamp voltage characteristics that protect electronic
system from any kind of surge.
High surge power withstanding capabilities that absorb load dump surge.
Excellent surge responsibility for steep surge absorption.
Surface mount type is available for easy applications.
Zxial lead type is also available.
Although the typical zener voltage is VZ=37V,
we can provide the products other than the typical values.
Corresponds to taping packages. (500P/Reel)
Automotive AEC Q101 Qualified.
MSL Level 1 guaranteed (Tpeak = 260 )
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Allowable Power Dissipation
(Note 1)
Non-Repetitive Peak Reverse
Surge Current
(See Fig.1 for the exponents.)
P
IRSM
Junction Temperature
Tj
Storage Temperature Range
Tstg
Note 1 : Lead tip temperature TL=25 .
RATING
4
50
-55 175
-40 150
UNIT
W
A
Z4W37V
ZENER DIODE SILICON
DIFFUSED-JUNCTION TYPE
C
D
E
Anode
G
Anode
Unit : mm
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
10.0+_ 0.5
8.5+_ 0.5
10.0+_ 0.3
13.5 +_0.3
15.5+_ 0.5
5.0+_ 0.3
9.0 +_ 0.3
2.0+_ 0.5
3.0+_ 0.5
2.7+_ 0.5
3.3+_ 0.5
7.6+_ 0.5
H
Cathode
Cathode
Weight : 2.5g
DO-218
I RSM
I RSM
2
0 10ms
Fig. 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Zener Voltage
Operating Resistance
VZ
rd
Temperature Coefficient
Forward Voltage
T
VF
Reverse Current
IR
TEST CONDITION
IZ=10mA
IZ=10mA
IZ=10mA
IF=6A
VR=32V
MIN.
34
-
-
-
-
TYP.
37
-
31
-
-
MAX.
40
35
49
1.2
10
UNIT
V
mV/
V
A
2008. 12. 10
Revision No : 2
1/2
Z4W37V
P - TL , Ta
6
5
4
TL-P
3
2 Ta-P
1
Size
Solder round
Substrate
Size
Thickness
a
b
c
Glass/epoxy
substrate
10mm
50mm
1.5mm
TL
Ca
b
0
0 50 100 150 200
LEAD TEMPERATURE TL , AMBIENT TEMPERATURE Ta ( C)
100
Ta=25 C
Typical
10
I Z - VZ
1
0.1
0.01
33
35 37 39
41 43
ZENER VOLTAGE VZ (V)
45
PRSM - tW
10 5 tW
PRSM
10 4
Rectangular Pulse
10 3
DESIGN RECOMMENDED REGION
10 2
10 1
0.1
1 10
PULSE WIDTH tW (ms)
100
R th - t
100
10
Rth(j-a)
1
Rth(j-D)
0.1
0.01
0.001 0.01
Typical
Rth(j-D) : Transient Thermal
Resistance between junction and
anode electrode.
0.1 1 10 100 1000
TIME (S)
2008. 12. 10
Revision No : 2
IF - VF
100
Tj = 25 C
10
1
0.1
0.4
0.6 0.8 1.0 1.2 1.4
FORWARD VOLTAGE VF (V)
1.6
2/2
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( kec )
Z4W37V diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
