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Pan Jit International |
SiC02A065NS
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
2A
Features
Temperature Independent Switching Behavior
Low Conduction and Switching Loss
High Surge Current Capability
Positive Temperature Coefficient on VF
Fast Reverse Recovery
Mechanical Data
Case: Molded plastic, TO-252AA
Marking: 02A065NS
Benefits
High Frequency Operation
Higher System Efficiency
Environmental Protection
Parallel Device Convenience
Hard Switching & High Reliability
High Temperature Application
TO-252AA
Unit: inch(mm)
Maximum Ratings
PARAMETER
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
(TP=10mS, Half Sine Wave, D=0.1)
SYMBOL
VRRM
VRSM
VR
IF(AV)
IFRM
TEST CONDITIONS
TJ=25oC
TJ=25oC
TJ=25oC
TC=25oC
TC=125oC
TC=150oC
TC=25oC
TC=125oC
VALUE
650
650
650
6.5
3.5
2
15
12
UNITS
V
V
V
A
A
A
A
A
June 13,2016-REV.00
Page 1
SiC02A065NS
Maximum Ratings
PARAMETER
Non-Repetitive Peak Forward Surge Current
(TP=10mS, Half Sine Wave)
Non-Repetitive Peak Forward Surge Current
(TP=10uS, Pulse)
Power Dissipation
Operating Junction Temperature
Storage Temperature
Thermal Resistance Junction to Case
SYMBOL
IFSM
TEST CONDITIONS
TC=25oC
TC=125oC
TC=25oC
PD
TJ
TSTG
RθJC
TC=25oC
TC=125oC
VALUE
16
13
106
30
10
175
-55 to 175
5
UNITS
A
A
A
W
W
oC
oC
oC/W
Electrical Characteristics
PARAMETER
DC Blacking Voltage
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
SYMBOL
VDC
VF
IR
QC
C
TEST CONDITION
IR =100uA, TJ=25oC
IF =2A, TJ=25oC
IF =2A, TJ=175oC
VR =650V, TJ=25oC
VR =650V, TJ=175oC
IF =2A, di/dt=300A/uS,
VR =400V, TJ=25oC
VR =1V, TJ=25oC, f=1MHz
VR =200V, TJ=25oC, f=1MHz
VR =400V, TJ=25oC, f=1MHz
MIN.
650
-
-
-
-
-
-
-
-
TYP.
770
1.5
1.9
1
5
MAX.
-
1.8
2.2
50
110
UNITS
V
V
V
uA
uA
6 - nC
82 - pF
15 - pF
15 - pF
June 13,2016-REV.00
Page 2
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