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RHRD640 반도체 회로 부품 판매점

Hyperfast Diodes



Harris 로고
Harris
RHRD640 데이터시트, 핀배열, 회로
RHRD640, RHRD650, RHRD660,
S E M I C O N D U C T O R RHRD640S, RHRD650S, RHRD660S
April 1995
6A, 400V - 600V Hyperfast Diodes
Features
Package
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . . . . . . . . <30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
Applications
JEDEC STYLE TO-251
ANODE
CATHODE
CATHODE
(FLANGE)
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Description
RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S and
RHRD660S are hyperfast diodes with soft recovery characteristics (tRR
< 30ns). They have half the recovery time of ultrafast diodes and are
sil icon nitride passivated ion-implanted epitaxial planar construction.
JEDEC STYLE TO-252
CATHODE
ANODE
CATHODE
(FLANGE)
These devices are intended for use as freewheeling/clamping diodes
and rectifiers in a variety of switching power supplies and other power
switching applications. Their low stored charge and hyperfast soft
recovery minimize ringing and electrical noise in many power switching
circuits reducing power loss in the switching transistors.
Symbol
K
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RHRD640
TO-251
RHR640
RHRD650
TO-251
RHR650
RHRD660
TO-251
RHR660
RHRD640S
TO-252
RHR640
RHRD650S
TO-252
RHR650
RHRD660S
TO-252
RHR660
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain
the TO-252 variant in tape and reel, e.g. RHRD660S9A.
A
Formerly developmental type TA49057.
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
RHRD640
RHRD640S
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . .VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . VRWM
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR
Average Rectified Forward Current . . . . . . . . . . . . . . . . IF(AV)
(TC = +152oC)
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . .IFSM
(Square Wave, 20kHz)
400
400
400
6
12
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . .IFSM
(Halfwave, 1 Phase, 60Hz)
60
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . EAVL
Operating and Storage Temperature . . . . . . . . . . . . TSTG, TJ
50
10
-65 to +175
Copyright © Harris Corporation 1995
7-13
RHRD650
RHRD650S
500
500
500
6
12
60
50
10
-65 to +175
RHRD660
RHRD660S
600
600
600
6
UNITS
V
V
V
A
12 A
60 A
50
10
-65 to +175
W
mj
oC
File Number 3746.2


RHRD640 데이터시트, 핀배열, 회로
Specifications RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S
Electrical Specifications TC = +25oC, Unless Otherwise Specified
SYMBOL
TEST
CONDITION
RHRD640, RHRD640S
MIN TYP MAX
RHRD650, RHRD650S
MIN TYP MAX
RHRD660, RHRD660S
MIN TYP MAX
UNITS
VF IF = 6A, TC = +25oC
-
- 2.1 -
- 2.1 -
- 2.1
V
IF = 6A, TC = +150oC
-
- 1.7 -
- 1.7 -
- 1.7
V
IR VR = 400V, TC = +25oC
- - 100 - - - - - - µA
VR = 500V, TC = +25oC
- - - - - 100 - - - µA
VR = 600V, TC = +25oC
- - - - - - - - 100 µA
IR VR = 400V, TC = +150oC - - 500 - - - - - - µA
VR = 500V, TC = +150oC - - - - - 500 - - - µA
VR = 600V, TC = +150oC - - - - - - - - 500 µA
tRR IF = 1A, dIF/dt = 200A/µs - - 30 - - 30 - - 30 ns
IF = 6A, dIF/dt = 200A/µs - - 35 - - 35 - - 35 ns
tA IF = 6A, dIF/dt = 200A/µs
- 16 -
- 16 -
- 16 -
ns
tB IF = 6A, dIF/dt = 200A/µs
- 8.5 -
- 8.5 -
- 8.5 -
ns
QRR
IF = 6A, dIF/dt = 200A/µs
- 45 -
- 45 -
- 45 -
nC
CJ
RθJC
VR = 10V, IF = 0A
- 20 -
- -3
- 20 -
- -3
- 20 -
pF
- - 3 oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time (See Figure 2), summation of tA + tB.
tA = Time to reach peak reverse current (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
QRR = Reverse recovery charge.
CJ = Junction capacitance.
RθJC = Thermal resistance junction to case.
EAVL = Controlled avalanche energy. (See Figures 10 and 11).
pw = pulse width.
D = duty cycle.
V1 AMPLITUDE CONTROLS IF
V2 AMPLITUDE CONTROLS dIF/dt
L1 = SELF INDUCTANCE OF
R4 + LLOOP
R1
+V1
0
t2
t1
Q1
R2
0
-V2
t3
Q3
R3
+V3
Q2
t1 5tA(MAX)
t2 > tRR
t3 > 0
L1 tA(MIN)
R4 10
LLOOP
DUT
Q4
C1
-V4
R4
FIGURE 1. tRR TEST CIRCUIT
IF
0
dIF
dt
tRR
tA tB
0.25 IRM
IRM
VR
VRM
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
7-14




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