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PDF CMS30I30A Data sheet ( Hoja de datos )

Número de pieza CMS30I30A
Descripción Schottky Barrier Diode
Fabricantes Toshiba 
Logotipo Toshiba Logotipo



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No Preview Available ! CMS30I30A Hoja de datos, Descripción, Manual

Schottky Barrier Diode
CMS30I30A
1. Applications
• Secondary Rectification in Switching Regulators
• Reverse-Current Protection in Mobile Devices
2. Features
(1) Peak forward voltage: VFM = 0.49 V (max)@IF = 3.0 A
(2) Average forward current: IF(AV) = 3.0 A
(3) Repetitive peak reverse voltage: VRRM = 30 V
(4) Small, thin package suitable for high-density board assembly
Toshiba Nickname: M-FLATTM
3. Packaging and Internal Circuit Pin Assignment
CMS30I30A
1: Anode
2: Cathode
3-4E1S
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol Note
Rating
Unit
Repetitive peak reverse voltage
VRRM
30
V
Average forward current
IF(AV) (Note 1)
3.0
A
Non-repetitive peak forward surge current
IFSM (Note 2)
30
Junction temperature
Tj
150
Storage temperature
Tstg -55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: T= 102 , square wave (α = 180°), VR = 15 V
Note 2: f = 50 Hz, half-sine wave
Start of commercial production
2010-10
1 2014-01-24
Rev.3.0

1 page




CMS30I30A pdf
10. Characteristics Curves (Note)
CMS30I30A
Fig. 10.1 IF - VF
Fig. 10.2 PF(AV) - IF(AV)
Fig. 10.3 Ta(max) - IF(AV)
Fig. 10.4 Tℓ(max) - IF(AV)
Fig. 10.5 Surge current
5
2014-01-24
Rev.3.0

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