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Transys |
RB421D Schottky barrier Diodes
FEATURES
z Small surface mounting type
z Low reverse current and low forward voltage
z High reliability
Marking: D3C
SOT-23-3L
+
-
2. 80¡ À0. 05
1. 60¡ À0. 05
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter
Symbol
Limits
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
VRM
VR
IO
IFSM
Tj
Tstg
40
40
100
1
125
-40~+125
Unit
V
V
mA
A
℃
℃
Electrical Ratings @TA=25℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ. Max. Unit
VF1 0.55 V
VF2 0.34 V
IR 30 µA
CT 6 pF
Conditions
IF=100mA
IF=10mA
VR=10V
VR=10V, f=1MHZ
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