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JCET |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
FEABTAURTES42WS/BAT43WS SCHOTTKY BARRIER DIODE
z Low Forward Voltage Drop
z Fast Switching Time
z Surface Mount Package Ideally Suited for Automatic Insertion
MARKING:
BAT42WS
BAT43WS
SOD-323
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking V oltage
RMS Reverse Voltage
VRRM
VRWM
VR
VR(RMS)
Forward Continuous Current
IFM
Repetitive Peak Forward Current @t<1.0s
Non-repetitive Peak Forward Surge Current
@t=8.3ms
Power Dissipation
IFRM
IFSM
Pd
Thermal Resistance Junction to Ambient
Junction temperature
Storage Temperature
RθJA
TJ
TSTG
Electrical Ratings @Ta=25℃
Parameter
Reverse breakdown voltage
Forward voltage
BothTypes
BAT42WS
BAT42WS
BAT43WS
BAT43WS
Reverse current
Capacitance between terminals
Symbol
V (BR)
VF
VF
VF
VF
VF
IR
CT
Min
30
0.26
Reverse recovery time
trr
Limit
30
21
200
500
4.0
200
500
125
-55~+150
Typ Max Unit
V
1.0 V
0.4 V
0.65 V
0.33 V
0.45 V
0.5 μA
10 pF
5 ns
Unit
V
V
mA
mA
A
mW
℃/W
℃
℃
Conditions
IR=10μA
IF=200mA
IF=10mA
IF=50mA
IF=2mA
IF=15mA
VR=25V
VR=1.0V,f=1.0MHz
IF=IR=10mA
Irr=0.1XIR,RL=100Ω
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1
E,Mar,2015
Typical Characteristics
BAT43WS
Forward Characteristics
200
100
10
1
0.1
0
100 200 300 400 500 600 700
FORWARD VOLTAGE VF (mV)
Capacitance Characteristics
20
Ta=25℃
f=1MHz
15
10
5
0
0 5 10 15 20
REVERSE VOLTAGE VR (V)
Reverse Characteristics
100
10 Ta=100 ℃
1
0.1
0.01
0
250
200
150
100
50
0
0
Ta=25 ℃
10 20
REVERSE VOLTAGE VR (V)
Power Derating Curve
30
25 50 75 100
AMBIENT TEMPERATURE Ta (℃)
125
www.cj-elec.com
2
E,Mar,2015
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