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Taiwan Semiconductor |
Small Signal Product
BAT43X
Taiwan Semiconductor
SOD-523F IFSM=4A 30V/200mA Schottky Diode
FEATURES
- Low Forward Voltage Drop
- Fast Switching Time
- Surface Mounted Device
- Moisture sensitivity level 1
- Pb free and RoHS compliant
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
- Case: Flat lead SOD-523F package
- High temperature soldering guaranteed: 260℃/10s
- Weight: 9.9mg (approximately)
SOD-523F
APPLICATION
- Portable consumer electronic devices
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Currect
Peak Forward Surge Current @t< 10ms
Repetitive Peak Forward Current @t< 1.0s
Power Dissipation
Thermal Resistance form Junction to Ambient
Junction Temperature
Storage Temperature Range
VRWM
VR
VR(RMS)
IFM
IFSM
IFRM
PD
RthjA
TJ
TSTG
30
30
21
200
4
500
200
500
125
- 55 to + 150
UNIT
V
V
V
mA
A
mA
mW
oC/W
oC
oC
PARAMETER
Reverse Breakdown Voltage
Reverse Current
Forward Voltage
Capacitance Between Terminals
Reverse Recovery Time
TEST CONDITION
at IR = 10 μA
at VR = 25 V
at IF = 2mA
at IF = 15mA
at IF = 200mA
VR=1V, f=1.0MHz
IF=IR=10mA
Irr=0.1XIR, RL=100Ω
SYMBOL
V(BR)
IR
VF
CT
trr
MIN
30
0.26
--
--
MAX
0.5
0.33
0.45
1
10
5
UNIT
V
µA
V
V
pF
ns
Document Number: DS_S1405008
Version: A14
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
1000
200
100
Fig.1 Typical Forward Characteristics
Ta=100°C
BAT43X
Taiwan Semiconductor
Fig. 2 Typical Reverse Characteristics
100
Ta=100°C
10
10
Ta=25°C
1
Ta=25°C
1 0.1
0.1
0
100 200 300 400 500 600 700
Forward Voltage (mV)
0.01
0
10 20
Reverse Voltage (V)
Fig. 3 Power Derating Curve
200
Fig. 4 Typical Capacitance Characteristics
20
150 15
100 10
50 5
00
0 25 50 75 100 125
0
Ambient Temperature (°C)
5 10
Reverse Voltage (V)
15
20
Document Number: DS_S1405008
Version: A14
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