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Philips |
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D102
BAS70W series
Schottky barrier (double) diodes
Product specification
Supersedes data of 1996 Mar 19
1999 Mar 26
Philips Semiconductors
Schottky barrier (double) diodes
Product specification
BAS70W series
FEATURES
• Low forward voltage
• High breakdown voltage
• Guard ring protected
• Very small SMD package
• Low capacitance.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
PINNING
BAS70
PIN
W -04W -05W -06W
1 a1 a1 a1 k1
2 n.c. k2 a2 k2
3 k1 k1, a2 k1, k2 a1, a2
handbook, 2 columns
3
DESCRIPTION
Planar Schottky barrier diodes. Single
diodes (BAS70W) and double diodes
with different pinning (BAS70-04W;
-05W; -06W) are available.
The diodes are encapsulated in a
SOT323 very small plastic SMD
package.
1
Top view
2
MBC870
Fig.1 Simplified outline
(SOT323) and pin
configuration.
MARKING
TYPE NUMBER
BAS70W
BAS70-04W
BAS70-05W
BAS70-06W
MARKING
CODE(1)
73∗
74∗
75∗
76∗
Note
1. ∗ = -: Made in Hong Kong.
∗ = t: Made in Malaysia.
3
12
n.c.
MLC357
Fig.2 BAS70W single diode
configuration (symbol).
3
12
MLC358
Fig.3 BAS70-04W diode
configuration (symbol).
3
12
MLC359
Fig.4 BAS70-05W diode
configuration (symbol).
3
12
MLC360
Fig.5 BAS70-06W diode
configuration (symbol).
1999 Mar 26
2
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