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JCET |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diodes
SOT-523
BAS40T/-04T/-05T/-06T SCHOTTKY BARRIER DIODE
FEATURES
z Low forward voltage
z Fast switching
BAS40T MARKING:43
MARKING:
BAS40T
BAS40-04T MARKING: 44 BAS40-05T MARKING: 45 BAS40-06T MARKING: 46
BAS40-04T
BAS40-05 T
BA S40-06 T
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings @Ta=25℃
Parameter
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking V oltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @ t = 8.3ms
Power Dissipation
Thermal Resistance Junction to Ambient
Operating Junction Temperature
Storage Temperature
Electrical Characteristics @Ta=25℃
Parameter
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Diode Capacitance
Symbol
V (BR)
VF1
VF2
IR
CD
Min
40
Reverse Recovery Time
trr
Symbol
VRRM
VRWM
VR
IFM
IO
IFSM
PD
RθJA
TJ
TSTG
Limit
40
200
200
0.6
150
667
125
-55~+150
Unit
V
mA
mA
A
mW
℃/W
℃
℃
Typ Max Unit
V
0.38 V
1V
0.2 μA
5 pF
5 ns
Conditions
IR=10μA
IF=1mA
IF=40mA
VR=30V
VR=0,f=1MHz
IF=IR=10mA
Irr=0.1XIR,RL=100Ω
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E,Oct,2015
Typical Characteristics
100
Pulsed
Forward Characteristics
10
1
0.1
0.01
0.0
0.2 0.4 0.6 0.8
FORWARD VOLTAGE V (V)
F
1.0
2000
1000
Pulsed
Reverse Characteristics
T =100℃
a
100
T =25℃
10 a
1
0 10 20 30
REVERSE VOLTAGE V (V)
R
40
Capacitance Characteristics
4
T =25℃
a
f=1MHz
3
2
1
0
0 5 10 15 20
REVERSE VOLTAGE V (V)
R
Power Derating Curve
200
150
100
50
0
0 25 50 75 100 125
AMBIENT TEMPERATURE T (℃)
a
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E,Oct,2015
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