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JCET |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
B2020WS SCHOTTKY BARRIER DIODE
FEATURES
z Low Forward Voltage Drop
z Very Small SMD Package
APPLICATIONS
z Low Voltage Rectification
z High Efficiency DC/DC Conversion
z Switch Mode Power Supply
z Inverse Polarity Protection
z Low Power Consumption Applications
MARKING: SH
SOD-323
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
Peak Repetitive Reverse Voltage
VRWM
VR(RMS)
IF
IFSM
PD
Working Peak Reverse Voltage
RMS Reverse Voltage
Continuous Forward Current
Non-repetitive Peak Forward Surge Current @ t=8.3ms
Power Dissipation
Note1
Note2
RΘJA
Thermal Resistance from Junction to Ambient
Note1
Note2
Tj Junction Temperature
Tstg Storage Temperature
1:Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2.Device mounted on an FR4 PCB with copper pad 10 x 10 mm.
Value
20
14
2
9
250
480
400
208
125
-55~+150
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse current
Symbol
V(BR)
IR
Forward voltage
Total capacitance
*Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
VF*
Ctot
Test conditions
IR=1mA
VR=10V
VR=20V
IF=1A
IF=2A
VR=4V,f=1MHz
Min Typ
20
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Unit
V
V
A
A
mW
℃/W
℃
℃
Max Unit
V
80
μA
100
0.45
V
0.55
120 pF
D,Mar,2015
Typical Characteristics
Forward Characteristics
2
1
0.1
0.01
0
100 200 300 400 500
FORWARD VOLTAGE V (mV)
F
600
Reverse Characteristics
10
1 T =100 oC
a
0.1
T =25 oC
a
0.01
1E-3
0
5 10 15 20 25
REVERSE VOLTAGE V (V)
R
30
Capacitance Characteristics
300
T =25℃
a
f=1MHz
250
200
150
100
50
0
0 5 10 15 20
REVERSE VOLTAGE V (V)
R
Power Derating Curve
300
250
200
150
100
50
0
0 25 50 75 100 125
AMBIENT TEMPERATURE T (℃)
a
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D,Mar,2015
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