B1040WS 반도체 회로 부품 판매점
SCHOTTKY BARRIER DIODE
|
|
 JCET |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
B10 4 0 WS SCHOTTKY BARRIER DIODE
FEATURES
z Low Forward Voltage Drop
z Very Small SMD Package
APPLICATIONS
z Low Voltage Rectification
z High Efficiency DC/DC Conversion
z Switch Mode Power Supply
z Inverse Polarity Protection
z Low Power Consumption Applications
MARKING: SZ
SOD-323
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
Peak Repetitive Reverse Voltage
VRWM
VR(RMS)
IO
Working Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Output Current
IFSM
PD
RΘJA
Tj
Tstg
Non-repetitive Peak Forward Surge Current @ t=8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
40
28
1
5
250
400
125
-55~+150
Unit
V
V
A
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max
Reverse breakdown voltage
Reverse current
V(BR)
IR
IR=1mA
VR =20V
40
50
Forward voltage
Total capacitance
IF=0.5A
VF
IF=0.7A
Ctot VR=10V,f=1MHz
0.51
0.55
20
Unit
V
uA
V
pF
www.cj-elec.com
1
A,Mar,2015
Typical Characteristics
Forward Characteristics
2
1
0.1
0.01
0
200 400 600 800
FORWARD VOLTAGE V (mV)
F
1000
1000
100
10
1
0.1
0
Reverse Characteristics
Ta=125℃
Ta=75℃
Ta=25℃
10 20 30
REVERSE VOLTAGE V (V)
R
40
Capacitance Characteristics
100
Ta=25℃
f=1MHz
80
60
40
20
0
0 10 20 30 40
REVERSE VOLTAGE V (V)
R
300
250
200
150
100
50
0
0
Power Derating Curve
25 50 75 100
AMBIENT TEMPERATURE T (℃)
a
125
www.cj-elec.com
2
A,Mar,2015
|
PDF 파일 내의 페이지 : 총 4 페이지
제조업체: JCET
( jcet )
B1040WS diode
데이터시트 다운로드 :
[ B1040WS.PDF ]
[ B1040WS 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
