파트넘버.co.kr BAT46W 데이터시트 PDF


BAT46W 반도체 회로 부품 판매점

Surface Mount Schottky Barrier Diode



Taiwan Semiconductor 로고
Taiwan Semiconductor
BAT46W 데이터시트, 핀배열, 회로
BAT46W
Surface Mount Schottky Barrier Diode
Voltage Range
100 Volts
200m Watts Power Dissipation
Features
High breakdown voltage
Low turn-on voltage
Guard ring construction for transient protection
0.053(1.35)
Max.
SOD-123
0.022(0.55)
Typ. Min.
Mechanical Data
Case: SOD-123, plastic
Terminals: Solderable per MIIL-STD-202,
Method 208
Polarity: Cathode band
Marking: Date Code and Type Code
or Date Code only
Type Code: L6
Weight: 0.01 grams (approx.)
0.152(3.85)
0.140(3.55)
0.010(0.25)
Min.
0.112(2.85)
0.100(2.55)
0.006(0.15)
Typ. Min.
0.067(1.70)
0.55(1.40)
0.004(0.10)
Max.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Forward Continuous Current (Note 1)
Repetitive Peak Forward Current (Note 1)
@ tp < 1.0s, Duty Cycle < 50%
Forward Surge Current (Note 1) @ tp=10ms
Power Dissipation (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Type Number
Reverse Breakdown Voltage IR=100uA pulses
Reverse Leakage Current (Note 2)
VR=1.5V
VR=1.5V Tj=60 OC
VR=10V
VR=10V Tj=60 OC
VR=50V
VR=50V Tj=60 OC
VR=75V
VR=75V Tj=60 OC
Forward Voltage
(Note 2)
IF=0.1mA
IF=10mA
IF=250mA
Junction Capacitance
VR=0V, f=1.0MHz
VR=1.0V, f=1.0MHz
Thermal resistance, Junction to Ambient Air
(Note1)
Symbol
VRRM
VRWM
VR
Io
IF
IFRM
IFSM
Pd
TJ, TSTG
Symbol
V(BR)
IR
VF
Cj
RθJA
Min
100
BAT46W
100
75
150
350
750
200
-55 to + 125
Typ
_
__
__
_ 10
6.0
__
Notes: 1. Valid Provided that Leads are Kept at Ambient Temperature.
2. Pulse Test: Pulse width = 300uS, Duty cycle 2%.
- 23 -
Max
_
0.5
5.0
0.8
7.5
2.0
15
5.0
20
0.25
0.45
1.00
_
500
Units
V
mA
mA
mA
mA
mW
OC
Units
V
uA
V
pF
K/W




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( taiwan )

BAT46W diode

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