BAW56T 반도체 회로 부품 판매점
SWITCHING DIODE
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 Transys |
Transys
Electronics
LIMITED
SOT-523 Plastic-Encapsulated Diodes
BAS16T/BAW56T/BAV70T/BAV99T
SWITCHING DIODE
FEATURES
Power dissipation
PD: 150 mW (Tamb=25℃)
Forward Current
IF:
Reverse Voltage
75 m A
VR: 85 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SOT-523
BAS16T Marking: A2 BAW56T Marking: JD
BAV70T Marking: JJ
BAV99T Marking: JE
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
V(BR)
IR1
IR2
VF
CD
t rr
Test conditions
IR= 100µA
VR=75V
VR=25V
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=0V, f=1MHz
MIN MAX
85
2
0.03
715
855
1000
1250
1.5
4
UNIT
V
µA
µA
mV
pF
nS
Typical Characteristics
BAS16T/BAW56T/BAV70T/BAV99T
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PDF 파일 내의 페이지 : 총 2 페이지
제조업체: Transys
( transys )
BAW56T diode
데이터시트 다운로드 :
[ BAW56T.PDF ]
[ BAW56T 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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